Intersil RFP15N05L, RFP15N06L Datasheet
RFP15N05L, RFP15N06L
Data Sheet July 1999
15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA0522.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP15N05L TO-220AB RFP15N05L
RFP15N06L TO-220AB RFP15N06L
NOTE: When ordering, use the entire part number.
File Number
Features
• 15A, 50V and 60V
•r
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.140Ω
DS(ON)
Components to PC Boards”
Symbol
D
1558.3
Packaging
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
G
S
6-229
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP15N05L, RFP15N06L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP15N05L RFP15N06L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DSS
DGR
D
DM
GS
D
Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
50 60 V
50 60 V
15
40
15
40
±10 ±10 V
60
0.48
60
0.48
-55 to 150 -55 to 150
300
260
300
260
A
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFP15N05L 50 - - V
RFP15N06L 60 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA (Figure 7) 1 - 2 V
VDS = 48V, VDS = 50V - - 1 µA
VDS = 48V, VDS = 50V TC = 125oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Input Capacitance C
GSS
ISS
VGS = ±10V, VDS = 0V - - 100 nA
= 15A, VGS = 5V (Figures 5, 6) - - 0.140 Ω
VDS = 25V, VGS = 0V, f = 1MHz
- - 900 pF
(Figure 8)
Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t
OSS
RSS
d(ON)
VDD = 30V, ID = 7.5A, RG = 6.25Ω
- - 450 pF
- - 200 pF
-1640ns
(Figures 10, 11)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
R
r
f
θJC
VGS = 5V - 225 325 ns
RFP15N05L, RFP15N06L - - 2.083oC/W
- 250 325 ns
- 200 325 ns
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 225 - ns
rr
NOTE:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-230
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