Intersil RFP14N06 Datasheet
RFP14N06
Data Sheet July 1999
14A, 60V, 0.100 Ohm, N-Channel Power
MOSFET
This N-Channel power MOSFET is manufactured using the
MegaFET process. This process which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance. It
was designed for use in applications such as switching
regulators, switching convertors, motor drivers, and relay
drivers. This transistor can be operated directly from
integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP14N06 TO-220AB RFP14N06
NOTE: When ordering, use the entire part number.
File Number
Features
• 14A, 60V
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.100Ω
DS(ON)
o
C Operating Temperature
Components to PC Boards”
®
Model
Symbol
D
G
4002.3
Packaging
DRAIN (FLANGE)
TO-220AB
SOURCE
DRAIN
GATE
S
4-492
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP14N06
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFP14N06 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
GS
DM
AS
D
Refer to Peak Current Curve
D
Linear Derating Factor Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
±20 V
14
Refer to UIS Curve
48
0.32
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)VGS
g(TH)VGS
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V (Figure 11) 60 - - V
= VDS, ID = 250µA, (Figure 10) 2 - 4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS,VGS
= 0V,TC= 150oC- - 25 µA
VGS = ±20V - - ±100 nA
= 14A, VGS = 10V, (Figure 9) - - 0.100 Ω
VDD =30V, ID = 7A, RL = 4.3Ω,
VGS = 10V, RGS = 25Ω
(Figure 13)
- - 60 ns
-14- ns
-26- ns
-45- ns
-17- ns
- - 100 ns
= 0V to 20V VDD = 48V, ID = 14A,
= 0V to 10V - - 25 nC
= 0V to 2V - - 1.5 nC
RL = 3.42Ω,
I
= 0.4mA
G(REF)
(Figure 13)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
- - 40 nC
- 570 - pF
- 185 - pF
-50- pF
- - 3.125oC/W
TO-220AB - - 62
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Diode Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-493
ISD = 14A - - 1.5 V
SD
ISD = 14A, dISD/dt = 100A/µs - - 125 ns
rr
RFP14N06
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
150
125
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
1
0.5
16
12
8
, DRAIN CURRENT (A)
4
D
I
0
25 50 75 100
TC, CASE TEMPERATURE (oC)
125
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
175
0.2
NORMALIZED
JC,
Z
100
10
, DRAIN CURRENT (A)
D
I
1
0.1
0.1
0.05
θ
0.02
THERMAL IMPEDANCE
0.01
0.01
-5
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
DS(ON)
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
-1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = 25oC
= MAX RATED
T
J
SINGLE PULSE
100µs
1ms
10ms
100ms
DC
100
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
VGS = 20V
-5
VGS = 10V
-4
10
, PEAK CURRENT (A)
DM
I
10
10
-3
10
t, PULSE WIDTH (s)
P
DM
t
1
t
2
1/t2
x R
JA
θ
0
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
10
-2
o
II
=
25
10
+ T
JA
θ
C DERATE PEAK
175 T
–
---------------------
150
TC = 25oC
-1
10
A
1
10
C
0
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-494
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