Intersil RFP12P08, RFP12P10 Datasheet
RFP12P08, RFP12P10
Data Sheet June 1999
12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate powerfieldeffecttransistors
designed for applications such as switching regulators,
switchingconvertors, motor drivers, relaydrivers,anddrivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP12P08 TO-220AB RFP12P08
RFP12P10 TO-220AB RFP12P10
NOTE: When ordering, include the entire part number.
File Number
Features
• 12A, 80V and 100V
•r
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.300Ω
Components to PC Boards”
Symbol
D
G
1495.2
Packaging
DRAIN
(TAB)
TO-220AB
SOURCE
DRAIN
GATE
S
4-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999.
RFP12P08, RFP12P10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP12P08 RFP12P10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
-80 -100 V
-80 -100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
12 12 A
30 30 A
±20 ±20 V
75 75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0
RFP12P08 -80 - - V
RFP12P10 -100 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA -2--4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS= 0V - - 1 µA
DSS
, VGS= 0V,
DSS
TC = 125oC--25µA
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
GSS
ISS
OSS
RSS
θ
VGS = ±20V, VDS = 0 - - ±100 nA
= 12A, VGS = -10V - - -3.6 V
= 12A, VGS = -10V, (Figures 6, 7) - - 0.300 Ω
≈ 12A, V
RG=50Ω, RL= 4.1Ω, VGS = -10V
r
(Figure 10)
DD
= 50V,
-1860 ns
- 90 175 ns
- 144 275 ns
f
VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)
- 94 175 ns
- - 1500 pF
- - 700 pF
- - 300 pF
RFP12P08, RFP12P10 - - 1.67
JC
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width = ≤ 300µs Max, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
4-162
ISD = -12A - - 1.4 V
ISD = -12A, dISD/dt = 100A/µs - 200 - ns
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