Intersil RFP12N10L Datasheet
RFP12N10L
Data Sheet July 1999 File Number
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP12N10L TO-220AB F12N10L
NOTE: When ordering, include the entire part number.
Features
• 12A, 100V
•r
DS(ON)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.200Ω
Components to PC Boards
1512.3
Packaging
DRAIN
(TAB)
Symbol
JEDEC TO-220AB
SOURCE
DRAIN
GATE
D
G
S
6-224
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP12N10L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP12N10L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
100 V
100 V
12 A
30 A
10 V
60 W
Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Thermal Resistance Junction to Case R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DSSID
GS(TH)
DSS
GSS
DS(ON)ID
ISS
OSS
RSS
d(ON)
r
d(OFF)
f
JC
θ
= 250mA, VGS = 0V 100 - - V
VGS = VDS, ID = 250mA (Figure 7) 1 - 2 V
VDS = 65V, VDS= 80V - - 1 µA
VDS = 65V, VDS = 80V TC = 125oC- - 50 µA
VGS = 10V, VDS= 0V - - 100 µA
= 12A, VGS = 5V (Figures 5, 6) - - 0.2 Ω
VGS = 0V, VDS = 25V, f = 1MHz
- - 900 pF
(Figure 8)
- - 325 pF
- - 170 pF
ID= 6A, VDD = 50V, RG= 6.25Ω,
-1550ns
VGS = 5V
(Figures 9, 10, 11)
- 70 150 ns
- 100 130 ns
- 80 150 ns
RFP12N10L 2.083 oC/W
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 50A/µs - 150 - ns
NOTES:
2. Pulsed: pulse duration = 80µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-225
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