Intersil RFP10P15 Datasheet
RFP10P15
Data Sheet October 1999
-10A, -150V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9404.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP10P15 TO-220AB RFP10P15
NOTE: When ordering, include the entire part number.
File Number 1595.2
Features
• -10A, -150V
•r
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.500Ω
Components to PC Boards”
Symbol
D
G
Packaging
DRAIN
(TAB)
TO-220AB
SOURCE
DRAIN
GATE
S
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
407-727-9207
| Copyright © Intersil Corporation 1999
RFP10P15
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP10P15 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
-150 V
-150 V
10 A
30 A
±20 V
75 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
DSSID
DSS
= 250µA, VGS = 0 -150 - - V
= VDS, ID = 250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, VGS = 0V,
DSS
TC = 125oC--25µA
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
GSS
OSS
RSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 10A, VGS = -10V - - -5.0 V
= 10A, VGS = -10V, (Figures 6, 7) - - 0.500 Ω
R
r
L
(Figures 10, 11, 12)
≈ 10A, V
= 7.5Ω, V
= -75V, R
DS
= -10V
GS
= 50Ω
G
-2450ns
- 74 150 ns
- 138 225 ns
f
VGS = 0V, VDS = -25V
ISS
f = 1MHz
(Figure 9)
- 61 100 ns
- - 1700 pF
- - 600 pF
- - 350 pF
RFM10P12, RFM10P15 - - 1.25
JC
θ
RFP10P12, RFP10P15 1.67
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
SD
rr
NOTES:
2. Pulsed: Pulse Duration = 300µs Max, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = -10A - - 1.4 V
ISD = -10A, dlSD/dt = 100A/µs - 210 - ns
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