Intersil RFM6N45, RFM6N50, RFP6N45, RFP6N50 Datasheet
5--1
Semiconductor
Features
• 6A, 450V and 500V
•r
DS(ON)
= 1.250Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for applications such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17425.
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM6N45 TO-204AA RFM6N45
RFP6N45 TO-204AA RFP6N45
RFP6N50 TO-220AB RFP6N50
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
File Number 1494.2
RFM6N45, RFP6N45,
RFP6N50
6A, 450V and 500V, 1.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/
Subject
(6A,
450V
and
500V,
1.250
Ohm, NChannel
Power
MOSFETs)
/
Author
()
/
Keywords
(Harris
Semiconductor, NChannel
Power
MOSFETs,
TO204AA,
TO220AB)
/
Creator
()
/
DOCIN
5-2
Absolute Maximum Ratings T
C
= 25oC, Unless Otherwise Specified
RFM6N45 RFP6N45 RFP6N50 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
450 450 500 V
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . V
DGR
450 450 500 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
666A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
15 15 15 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
100 75 75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.6 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
-55 to 150 -55 to 150 -55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T
pkg
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
C
= 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
ID = 250µA, VGS = 0V
450 - - V
RFM6N45, RFP6N45
RFP6N50 500 - - V
Gate Threshold Voltage V
GS(TH)
VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V
Zero-Gate Voltage Drain Current I
DSS
VDS = Rated BV
DSS
, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BV
DSS
,
VGS = 0V, TC = 125oC
--25µA
Gate to Source Leakage Current I
GSS
VGS = ±20V, VDS = 0V - - ±100 nA
Drain to Source On Resistance(Note 2 ) r
DS(ON)ID
= 6A, VGS = 10V, (Figures 6, 7) - - 1.250 Ω
Drain to Source On-Voltage (Note 2) V
DS(ON)
ID = 6A, VGS = 10V - - 7.50 V
Turn-On Delay Time t
d(ON)
ID= 3A, VDD = 250V, RG=50Ω,
VGS = 10V, RL= 81Ω
(Figures 10, 11, 12)
-1545ns
Rise Time t
r
-4080ns
Turn-Off Delay Time t
d(OFF)
- 190 300 ns
Fall Time t
f
- 60 100 ns
Input Capacitance C
ISS
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
- - 1500 pF
Output Capacitance C
OSS
- - 250 pF
Reverse Transfer Capacitance C
RSS
- - 200 pF
Thermal Resistance Junction to Case R
θ
JC
RFM6N45 - - 1.25oC/W
RFP6N45, RFP6N50 1.67oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
ISD = 3A - - 1.4 V
Diode Reverse Recovery Time t
rr
ISD = 4A, dISD/dt = 100A/µs - 800 - ns
NOTES:
2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM6N45, RFP6N45, RFP6N50
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