Intersil RFM18N08, RFM18N10, RFP18N08, RFP18N10 Datasheet

Semiconductor

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September 1998

RFM18N08, RFM18N10,

RFP18N08, RFP18N10

18A, 80V and 100V, 0.100 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N

10)
Subject

(18A,
80V and
100V,

0.1 Ohm,

N-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Creator

()

DOCIN

FO pdf­mark

Features

• 18A, 80V and 100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.100Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFM18N08 TO-204AA RFM18N08
RFM18N10 TO-204AA RFM18N10
RFP18N08 TO-220AB RFP18N08
RFP18N10 TO-220AB RFP18N10

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA17421.

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1446.1

RFM18N08, RFM18N10, RFP18N08, RFP18N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

80 100 80 100 V
80 100 80 100 V
18

45

18
45

18

45
±20 ±20 ±20 ±20 V
100

0.8

100

0.8

75

0.6

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300

L

260

300
260

300
260

18
45

75

0.6

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM18N08, RFP18N08 80 - - V
RFM18N10, RFP18N10 100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSSVDS

GSSVGS

r

f

ISSVDS

OSS

RSS

θJC

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
= Rated BV

VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS= 0V, TC = 125oC- - 25 µA

DSS

= ±20V, VDS = 0V - - ±100 nA
= 18A, VGS = 10V, (Figures 6, 7) - - 0.100 Ω
= 18A, VGS = 10V - - 1.8 V

= 50V, I

RL = 5.5Ω
(Figures 10, 11, 12)

≈ 9A, R

D

= 50Ω, VGS = 10V,

G

-6090ns

- 300 450 ns

- 150 225 ns

- 150 225 ns

= 25V, VGS = 0V, f = 1MHz,

(Figure 9)

- - 1700 pF

- - 750 pF

- - 300 pF
RFM18N08, RFM18N10 - - 1.25oC/W
RFP18N08, RFP18N10 - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD = 9A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 150 - ns

5-2