Intersil RFM12N35, RFM12N40 Datasheet
Semiconductor
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j
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September 1998
RFM12N35,
RFM12N40
12A, 350V and 400V, 0.500 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N35,
RFM12
N40)
Sub-
ect
(12A,
350V
and
400V,
0.500
Ohm,
N-Channel
Power
MOSFETs)
Author
()
Keywords
(12A,
350V
and
400V,
0.500
Ohm,
N-Channel
Power
MOSFETs)
Creator ()
DOCIN
Features
• 12A, 350V and 400V
DS(ON)
= 0.500Ω
•r
Ordering Information
PART NUMBER PACKAGE BRAND
RFM12N35 TO-204AA RFM12N35
RFM12N40 TO-204AA RFM12N40
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
GATE (PIN 1)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17434.
Symbol
D
G
S
JEDEC TO-204AA
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 1787.1
RFM12N35, RFM12N40
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFM12N35 RFM12N40 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
350 400 V
350 400 V
12 12 A
24 24 A
±20 ±20 V
150 150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
260 260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250mA, VGS = 0V
RFM12N35 350 - - V
RFM12N40 400 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
DSS,VGS
VDS = 0.8 x Rated BV
= 0 - - 1 µA
DSS, VGS
= 0,
--25µA
TC = 125oC
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
GSS
DS(ON)ID
DS(ON)ID
VGS = ±20V, VDS = 0V - - ±100 nA
= 12A, VGS = 10V, (Figures 6, 7) - - 0.500 Ω
= 6A, VGS = 10V - - 3 V
ID = 12A, VGS = 10V - - 6.0 V
Turn-On Delay Time t
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
ISS
OSS
RSS
θJC
≈ 6A, V
= 200V, RG = 50Ω,
DS
VGS = 10V, RL = 33Ω,
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figures 9)
-3050ns
- 105 150 ns
- 480 750 ns
- 140 200 ns
- - 3000 pF
- - 900 pF
- - 400 pF
- - 0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
Diode Reverse Recovery Time t
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 950 - ns
rr
5-2
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