Semiconductor
September 1998
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
Subject
(12A,
180V
and
200V,
0.250
Ohm, NChannel
Power
MOSFETs)
Author
()
Key-
words
(Harris
Semiconductor, NChannel
Power
MOSFETs,
TO204AA,
TO220AB)
Creator
()
DOCIN
Features
• 12A, 180V and 200V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.250Ω
DS(ON)
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
RFM12N18 TO-204AA RFM12N18
RFM12N20 TO-204AA RFM12N20
RFP12N18 TO-220AB RFP12N18
RFP12N20 TO-220AB RFP12N20
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA JEDEC TO-220AB
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09293.
Symbol
D
G
S
SOURCE
DRAIN
(TAB)
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 1461.2
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFM12N18 RFM12N20 RFP12N18 RFP12N20 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1mΩ) (Note 1). . . . . . . . . . . . . . . V
DSS
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DM
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
pkg
180 200 180 200 V
180 200 180 200 V
D
12
30
12
30
12
30
±20 ±20 ±20 ±20 V
100
D
0.8
100
0.8
75
0.6
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
L
260
300
260
300
260
12
30
75
0.6
300
260
A
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFM12N18, RFP12N18 180 - - V
RFM12N20, RFP12N20 200 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS, VGS
= 0V,
--25µA
TC = 125oC
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)VDD
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
VGS = ±20V, VDS = 0V - - ±100 nA
= 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω
= 12A, VGS = 10V - - 3.0 V
= 100V, I
RL = 16.5Ω, VGS = 10V,
r
(Figures 10, 11, 12)
≈ 6A, R
D
= 50Ω,
G
-3550ns
- 130 200 ns
- 120 180 ns
f
VDS = 25V, VGS = 0V, f = 1MHz,
ISS
(Figure 9)
OSS
RSS
RFM12N18, RFM12N20 - - 1.25oC/W
θJC
- 105 160 ns
- - 1700 pF
- - 600 pF
- - 300 pF
RFP12N18, RFP12N20 - - 1.67oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTE:
2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
ISD = 6A - - 1.4 V
SD
ISD = 4A, dISD/dt = 100A/µs - 325 - ns
rr
5-2