Intersil RFM12N08, RFM12N10, RFP12N08, RFP12N10 Datasheet

Semiconductor

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RFM12N08, RFM12N10, RFP12N08, RFP12N10

[ /Title
(RFM12
N08,
RFM12
N10,
RFP12
N08,
RFP12
N10)

Sub-

ect
(12A,
80Vand
100V,

0.2
Ohm,
N-Chan­nel
Power
MOS­FETs)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Chan­nel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Cre-

Data Sheet

12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09594.

Ordering Information

PART NUMBER PACKAGE BRAND

RFM12N08 TO-204AA RFM12N08
RFM12N10 TO-204AA RFM12N10
RFP12N08 TO-220AB RFP12N08
RFP12N10 TO-220AB RFP12N10

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

October 1998 File Number 1386.2

Features

• 12A, 80V and 100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.200Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

80 100 80 100 V
80 100 80 100 V
12

30

12
30

12
30

12
30

±20 ±20 ±20 ±20 V

75

0.6

75

0.6

60

0.48

60

0.48

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

RFM12N08, RFP12N08

DSSID

= 250µA, VGS = 0V

80 - - V

RFM12N10, EFP12N10 100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS = Rated BV

DSS,VGS

VDS= 0.8x Rated BV

= 0V - - 1 µA

DSS,TC

= 125oC- - 25 µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 12A, VGS = 10V (Figures 6, 7) - - 0.200 Ω
= 12A, VGS = 10V - - 2.4 V

= 50V, ID = 6A, RG = 50Ω,
VGS = 10V, RL = 8Ω,
(Figures 10, 11, 12)

-4570ns

- 250 375 ns

- 85 130 ns

- 100 150 ns

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)

- - 850 pF

- - 300 pF

- - 150 pF
RFM12N08, RFM12N10 - - 1.67
RFP12N08, RFP12N10 - - 2.083

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage (Note 2) V
Reverse Recovery Time t

SD

rr

NOTE:

2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 150 - ns