Intersil RFM10N45, RFM10N50 Datasheet

Semiconductor

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September 1998

RFM10N45,

RFM10N50

10A, 450V and 500V, 0.600 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM10
N45,
RFM10
N50)

Subject
(10A,
450V
and
500V,

0.600
Ohm, N­Channel
Power
MOS­FETs)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­204AA)

Creator
()

DOCIN
FO pdf­mark

Features

• 10A, 450V and 500V

DS(ON)

= 0.600Ω

•r

Ordering Information

PART NUMBER PACKAGE BRAND

RFM10N45 TO-204AA RFM10N45

RFM10N50 TO-204AA RFM10N50

NOTE: When ordering, include the entire part number.

Packaging

DRAIN
(FLANGE)

GATE (PIN 1)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA17435.

Symbol

D

G

S

JEDEC TO-204AA

SOURCE (PIN 2)

[ /Page­Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1788.1

RFM10N45, RFM10N50

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM10N45 RFM10N50 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DM

GS

450 500 V
450 500 V

D

10 10 A

20 20 A
±20 ±20 V
150 150 W

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

-55 to 150 -55 to 150

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

260 260

L

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

= 0V, ID = 250µA

RFM10N45 450 - - V
RFM10M50 500 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)VGS

DS(ON)VGS

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Impedance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA, (Figure 8) 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V, TC = 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 10V, ID = 10A, (Figures 6, 7) - - 0.600 Ω

= 10V, ID = 10A 6.0 V
VDS = 250, I

RL = 50Ω, (Figures 10, 11, 12)

≈ 5A, V

D

= 10V, RG = 50Ω,

GS

-2660ns

- 50 100 ns

- 525 900 ns

- 105 180 ns

VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 9) - - 3000 pF

- - 600 pF

- - 200 pF

- - 0.83oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTE:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD= 5A - - 1.4 V

SD

ISD = 4A, dISD/dt = 100A/µs - 950 - ns

rr

5-2