Intersil RFM10N12, RFM10N15, RFP10N15 Datasheet
RFP10N15
March 1999 File Number 1445.3Data Sheet
10A, 150V, 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP10N15 TO-220AB RFP10N15
NOTE: When ordering, include the entire part number.
Packaging
TO-220AB
Features
• 10A, 150V
•r
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.300Ω
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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| Copyright © Intersil Corporation 1999
RFP10N15
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP10N15 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
150 V
150 V
10 A
25 A
±20 V
60 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance(Note 2) r
DS(ON)ID
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DSSID
GS(TH)
DSS
GSS
DS(ON)ID
d(ON)
= 250µA, VGS = 0 150 - - V
VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS= Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, TC = 125oC- - 25 mA
DSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 10A, VGS = 10V, (Figures 6, 7) - - 0.300 Ω
= 10A, VGS = 10V - - 3.0 V
I
≈ 5A, V
D
= 75V, R
DD
= 50Ω,
G
-4060ns
VGS = 10V, RL= 14.7Ω
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
r
f
ISS
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V,
- 165 250 ns
- 90 135 ns
- 90 135 ns
- - 850 pF
f = 1MHz, (Figure 9)
Output Capacitance C
Reverse Transfer Capacitance C
OSS
RSS
- - 230 pF
- - 100 pF
Thermal Resistance Junction to Case RFP10N15 - - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = 5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 200 - ns
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