Intersil RFL4N12, RFL4N15 Datasheet
Semiconductor
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September 1998
RFL4N12,
RFL4N15
4A, 120V and 150V, 0.400 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFL4N
12,
RFL4N1
5)
Subject
(4A,
120V
and
150V,
0.400
Ohm, NChannel
Power
MOSFETs)
Author
()
Key-
words
(Harris
Semiconductor, NChannel
Power
MOSFETs,
TO205AF)
Creator
()
DOCIN
FO pdfmark
Features
• 4A, 120V and 150V
DS(ON)
= 0.400Ω
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER PACKAGE BRAND
RFL4N12 TO-205AF RFL4N12
RFL4N15 TO-205AF RFL4N15
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9192.
Symbol
D
G
S
SOURCE
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 1462.2
RFL4N12, RFL4N15
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL4N12 RFL4N15 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
120 150 V
120 150 V
44A
15 15 A
±20 ±20 V
8.33 8.33 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maxim um Ratings” ma y cause permanent damage to the device . This is a stress only rating and oper ation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
260 260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFL4N12 120 - - V
RFL4N15 150 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On-Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
GS(TH)VGS
DSS
GSS
DS(ON)ID
DS(ON)ID
d(ON)
= VDS, ID = 250µA (Figure 8) 2-4V
VDS = Rated BV
DSS
VDS = 0.8 x Rated BV
, TC = 125oC--25µA
DSS
--1µA
VGS = ±20V, VDS = 0V - - ±100 nA
= 4A, VGS = 10V - - 1.6 V
= 4A, VGS = 10V (Figures 6, 7) - - 0.400 Ω
VDD = 75V, I
≈ 2A, R
D
= 50Ω, VGS = 10V
G
-4060ns
(Figures 10, 11, 12)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
r
f
ISS
VDS = 25V, VGS = 0V, f = 1MHz
- 165 250 ns
- 90 135 ns
- 90 135 ns
- - 850 pF
(Figure 9)
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
OSS
RSS
θJC
- - 230 pF
- - 100 pF
--15oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
SD
rr
NOTE:
2. Pulse Test: pulse duration ≤ 300µs max, duty cycle ≤ 2%.
ISD = 2A 1.4 V
ISD = 2A, dISD/dt = 100A/µs 200 - ns
5-2
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