Intersil RFL2N06L Datasheet
RFL2N06L
Data Sheet October 1999
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Ordering Information
PART NUMBER PACKAGE BRAND
RFL2N06L TO-205AF RFL2N06L
NOTE: When ordering, use the entire part number.
File Number 1560.3
Features
• 2A, 50V and 60V
DS(ON)
= 0.950Ω
•r
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
Packaging
DRAIN
(CASE)
G
S
JEDEC TO-205AF
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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| Copyright © Intersil Corporation 1999
RFL2N06L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL2N06L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
50 V
60 V
2A
10 A
±10 V
8.33 W
Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
300
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
Zero Gate Voltage Drain Current IDSS VDS = Rated BV
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
DS(ON)ID
DS(ON)ID
d(ON)ID
r
d(OFF)
f
ISS
OSS
RSS
θJC
= 250µA, VGS = 0V 60 - - V
= VDS, ID = 250µA, (Figure 8) 1 - 2 V
, VGS = 0V - - 1 µA
DSS
VDS = 0.8 x Rated BV
, VGS = 0V, TC = 125oC- -25µA
DSS
VGS = ±10V, VDS = 0V - - ±100 nA
= 2A, VGS = 5V - - 1.9 V
=2A, VGS = 5V, (Figures 6, 7) - 0.950 Ω
= 2A, VDD = 30V, RG = 6.25Ω, RL =30Ω
VGS = 5V, (Figures 10, 11, 12)
-1020ns
- 65 130 ns
-2040ns
-3060ns
VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 225 pF
- - 100 pF
- - 40 pF
--15oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = 2A - - 1.4 V
ISD = 2A, dISD/dt = 100A/µs - 150 - ns
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