Intersil RFL1P08, RFL1P10 Datasheet
July 1998
Semiconductor
RFL1P08,
RFL1P10
1A, -80V and -100V, 3.65 Ohm,
P-Channel Power MOSFETs
Features
• 1A, -80V and -100V
•r
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
= 3.65Ω
Ordering Information
PART NUMBER PACKAGE BRAND
RFL1P08 TO-205AF RFL1P08
RFL1P10 TO-205AF RFL1P10
NOTE: When ordering, include the entire part number.
Packaging
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA9400.
Symbol
D
G
S
JEDEC TO-205AF
DRAIN
(CASE)
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
6-1
SOURCE
File Number 1535.2
RFL1P08, RFL1P10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL1P08 RFL1P10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
-80 -100 V
-80 -100 V
11A
55A
±20 ±20 V
8.33 8.33 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
300 300
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
ID = 250µA, VGS = 0
RFL1P08 -80 - - V
RFL1P10 -100
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On-Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
GS(TH)
DSS
GSS
DS(ON)ID
DS(ON)ID
d(ON)
r
d(OFF)
f
ISS
OSS
RSS
JC
θ
VGS = VDS, ID = 250µA -2 - -4 V
VDS = Rated BV
= 0.8 x Rated BV
V
DS
DSS,VGS
= 0V - - -1 µA
DSS,VGS
= 0,
25 µA
TC = 125oC
VGS = ±20V, VDS = 0 - - ±100 nA
= 1A, VGS = -10V - - -3.65 V
= 1A, VGS = -10V (Figures 6, 7) - - 3.65 Ω
I
≈ 1A, V
D
R
= 50Ω
G
VGS = -10V
RL = 47Ω
(Figures 10, 11, 12)
DD
= -50V
- 7 25 ns
-1545ns
-1445ns
-1125ns
VGS = 0V, VDS = -25V
f = 1MHz
(Figure 9)
- - 150 pF
- - 80 pF
- - 30 pF
--15
o
C/W
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
ISD = -1A - - -1.4 V
ISD = -1A, dISD/dt = 50A/µs - 135 - ns
NOTES:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by mazimum junction temperature.
6-2
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