Intersil RFL1N18, RFL1N20 Datasheet
January 1998
Semiconductor
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Po wer MOSFETs
Features
• 1A, 180V and 200V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 3.65Ω
DS(ON)
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
RFL1N18 TO-205AF RFL1N18
RFL1N20 TO-205AF RFL1N20
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-1
File Number 1442.2
RFL1N18, RFL1N20
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL1N18 RFL1N20 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
180 200 V
180 200 V
11A
55A
±20 ±20 V
8.33 8.33 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFL1N18 180 - - V
RFL1N20 200 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On-Voltage (Note 2) V
GS(TH)VGS
DSS
GSS
DS(ON)ID
= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = 0.8 x Rated
BV
DSS
TC = 25oC--1µA
T
= 125oC--25µA
C
VGS = ±20V, VDS = 0V - - ±100 nA
= 1A, VGS = 10V - - 3.65 V
ID = 2A, VGS = 10V - - 8.3 V
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
fs
r
f
ISS
OSS
RSS
θJC
= 1A, VGS = 10V, (Figures 6, 7) - - 3.65 Ω
ID = 1A, VDS = 10V, (Figure 10) 400 - - S
≈ 1A, VDD = 100V RGS = 50Ω,
VGS = 10V, (Figures 11, 12, 13)
-1525ns
-2030ns
-2540ns
-3050ns
VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)
- - 200 pF
- - 60 pF
- - 25 pF
--15
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTE:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
SD
rr
ISD = 1A - - 1.4 V
ISD= 2A, dISD/dt = 50A/µs - 200 - ns
5-2
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