Intersil RFL1N12L, RFL1N15L Datasheet

Semiconductor

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September 1998

RFL1N12L,

RFL1N15L

1A, 120V and 150V, 1.900 Ohm,

Logic Level, N-Channel Power MOSFETs

[ /Title
(RFL1N
12L,
RFL1N1
5L)

Subject
(1A,
120V
and
150V,

1.900
Ohm,
Logic
Level,
N-Chan­nel
Power
MOS­FETs)

Author
()

Key­words
(Harris
Semi­conduc­tor,
Logic
Level,
N-Chan­nel
Power
MOS­FETs,
TO­205AF)

Features

• 1A, 120V and 150V

•r

DS(ON)

= 1.900Ω

Ordering Information

PART NUMBER PACKAGE BRAND

RFL1N12L TO-205AF RFL1N12L
RFL1N15L TO-205AF RFL1N15L

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(CASE)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and sole­noid drivers. This performance is accomplished through a
special gate oxide design which provides full rated conduc­tion at gate biases in the 3V to 5V range, thereby facilitating
true on-off power control directly from logic circuit supply
voltages.

Formerly developmental type TA09528.

Symbol

D

G

S

JEDEC TO-205AF

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

7-1

File Number 1513.2

RFL1N12L, RFL1N15L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFL1N12L RFL1N15L UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

120 150 V
120 150 V

11A
55A

±10 ±10 V

8.33 8.33 W

Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

260 260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

ID = 250µA, VGS = 0

RFL1N12L 120 - - V
RFL1N15L 150 - - V

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

VGS = VDS, ID = 250µA, (Figure 8) 1 - 2 V
VDS = Rated BV

DSS

VDS = 0.8 x Rated BV

, TC = 125oC--25µA

DSS

--1µA

VGS = ±10V, VDS = 0 - - ±100 µA

= 1A, VGS = 5V, (Figures 6, 7) - - 1.900 Ω
= 1A, VGS = 5V - - 1.9 V

I

≈ 1A, V

D

RL= 75Ω, VGS = 5V,
(Figures 10, 11, 12)

= 75V, RG= 6.25Ω,

DD

-1025ns

-1045ns

-2445ns

-3050ns

VGS = 0V, VDS = 25V, f = 1MHz,(Figure 9) - - 200 pF

- - 80 pF

- - 35 pF

--15oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

ISD = 1A - - 1.4 V
ISD = 1A, dI

NOTES:

2. Pulse test: width ≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse witdh limited by maximum junction temperature.

7-2

dt = 50A/µs - 150 - ns

SD/