Intersil RFL1N08, RFL1N10 Datasheet
Semiconductor
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September 1998
RFL1N08,
RFL1N10
1A, 80V and 100V, 1.200 Ohm,
N-Channel, Power MOSFETs
[ /Title
(RFL1N
08,
RFL1N1
0)
Subject
(1A,
80V and
100V,
1.200
Ohm, NChannel,
Power
MOSFETs)
Author
()
Key-
words
(Harris
Semiconductor, NChannel,
Power
MOSFETs,
TO204AA)
Creator
()
DOCIN
FO pdf-
Features
• 1A, 80V and 100V
DS(ON)
= 1.200Ω
•r
Ordering Information
PART NUMBER PACKAGE BRAND
RFL1N08 TO-205AF RFL1N08
RFL1N10 TO-205AF RFL1N10
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(CASE)
Description
These are N-channel enhancement mode silicon-gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09282.
Symbol
D
G
S
JEDEC TO-204AA
SOURCE
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 1385.2
RFL1N08, RFL1N10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFL1N08 RFL1N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
80 100 V
80 100 V
11A
55A
±20 ±20 V
8.33 8.33 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
260 260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFL1N08 80 - - V
RFL1N10 100 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VDS
DSSVGS
= VGS, ID = 250µA, (Figure 8) 2 - 4 V
= Rated BV
VDS = 0.8 x Rated BV
On-State Drain Current (Note 2) I
Gate to Source Leakage Current I
Drain to Source On Resistance r
Turn-On Delay Time t
D(ON)VDS
GSSVGS
DS(ON)ID
d(ON)VDD
> I
D(ON)
= ±20V - - ±100 nA
= 5.6A, VGS = 10V, (Figures 6, 7) 1.200 Ω
= 50V, VGS = 10V, I
RL = 50Ω (Figures 10, 11, 12)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
MOSFET Switching Times are Essentially Inde-
r
pendent of Operating Temperature
f
ISSVDS
= 25V, VGS = 0V, f = 1MHz
(Figure 9)
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
OSS
RSS
θJC
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
TJ = 25oC, ISD = 1A, VGS = 0V - - 1.4 V
SD
TJ = 25oC, ISD = 1A, dISD/dt = 100A/µs - 100 - ns
rr
, VGS = 0V - - 1 µA
DSS
, VGS = 0V, TJ = 125oC- - 25 µA
DSS
x r
DS(ON)MAX
, VGS = 10V 1 - - A
≈ 1A, R
D
= 50Ω,
G
-1725ns
-3045ns
-3045ns
-3050ns
- - 200 pF
- - 80 pF
- - 25 pF
--
o
C/W
5-2
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