Intersil RFL1N08, RFL1N10 Datasheet

Semiconductor

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September 1998

RFL1N08,

RFL1N10

1A, 80V and 100V, 1.200 Ohm,

N-Channel, Power MOSFETs

[ /Title
(RFL1N
08,
RFL1N1

0)
Subject

(1A,
80V and
100V,

1.200

Ohm, N­Chan­nel,
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Chan­nel,
Power
MOS­FETs,
TO­204AA)

Creator

()

DOCIN

FO pdf-

Features

• 1A, 80V and 100V

DS(ON)

= 1.200Ω

•r

Ordering Information

PART NUMBER PACKAGE BRAND

RFL1N08 TO-205AF RFL1N08
RFL1N10 TO-205AF RFL1N10

NOTE: When ordering, use the entire part number.

Packaging

DRAIN

(CASE)

Description

These are N-channel enhancement mode silicon-gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA09282.

Symbol

D

G

S

JEDEC TO-204AA

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1385.2

RFL1N08, RFL1N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFL1N08 RFL1N10 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

80 100 V
80 100 V

11A
55A

±20 ±20 V

8.33 8.33 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0667 0.0667 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

260 260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFL1N08 80 - - V

RFL1N10 100 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VDS

DSSVGS

= VGS, ID = 250µA, (Figure 8) 2 - 4 V
= Rated BV

VDS = 0.8 x Rated BV
On-State Drain Current (Note 2) I
Gate to Source Leakage Current I
Drain to Source On Resistance r
Turn-On Delay Time t

D(ON)VDS

GSSVGS

DS(ON)ID

d(ON)VDD

> I

D(ON)

= ±20V - - ±100 nA

= 5.6A, VGS = 10V, (Figures 6, 7) 1.200 Ω

= 50V, VGS = 10V, I

RL = 50Ω (Figures 10, 11, 12)
Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C

MOSFET Switching Times are Essentially Inde-

r

pendent of Operating Temperature

f

ISSVDS

= 25V, VGS = 0V, f = 1MHz

(Figure 9)
Output Capacitance C

Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

OSS

RSS

θJC

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

TJ = 25oC, ISD = 1A, VGS = 0V - - 1.4 V

SD

TJ = 25oC, ISD = 1A, dISD/dt = 100A/µs - 100 - ns

rr

, VGS = 0V - - 1 µA

DSS

, VGS = 0V, TJ = 125oC- - 25 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 1 - - A

≈ 1A, R

D

= 50Ω,

G

-1725ns

-3045ns

-3045ns

-3050ns

- - 200 pF

- - 80 pF

- - 25 pF

--

o

C/W

5-2

RFL1N08, RFL1N10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

100 125 15025 50 750

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

OPERATION IN THIS AREA

LIMITED BY R

1

DS(ON)

TC =25oC
TJ = MAX RATED

1.2

1.0

0.8

0.6

0.4

ID, DRAIN CURRENT (A)

0.2

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

PULSE DURATION = 80µs

VGS = 20V

2.5

2

VGS = 10V

VGS = 9V

VGS = 8V

VGS = 7V

0.1

, DRAIN CURRENT, AMPS

d

I

RFL1N08

0.01
1 10 100 1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

RFL1N10

1A

, DRAIN CURRENT (A)

D

I

V

DS

3210 45678910

, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

VGS = 5V

VGS = 4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

4.0

PULSE DURATION = 80µs
VDS = 10V

3.5

3.0

2.5

C

2.0

1.5

1

, DRAIN TO SOURCE CURRENT (A)

0.5

DS(0N)

I

0

TC = -40oC

o

T

= 25

C

C

0246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

o

= 125

C

T

TC = 125oC

T

= -40

C

C

o

= 25

C

T

C

o

1.6
VGS = 10V

PULSE DURATION = 80µs

1.4

1.2

CASE TEMPERATURE (TC) = 125oC

1

0.8

0.6

DRAIN TO SOURSE

ON RESISTANCE

0.4

DS(ON),

r

0.2

0

0 1.50.5 1 2.0 2.5

ID, DRAIN CURRENT (A)

TC = -40oC

TC = 25oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

5-3

RFL1N08, RFL1N10

Typical Performance Curves

2.0
ID = 1A, VGS = 10V

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 50 100 150 2000
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

240

200

160

120

80

C, CAPACITANCE (pF)

40

0

V

, DRAIN TO SOURCE (V)

DS

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

C

C

GD

≈ CDS + C

ISS

OSS

C

RSS

60 7050403020100

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.4
VGS = VDS, ID = 250µA

1.2

1.0

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 100 150 20050
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTAGE vs

JUNCTION TEMPERATURE

100

V

= BV

DD

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

IG (REF)

20

IG (ACT)

DSS

DRAIN SOURCE VOLTAGE

GATE

SOURCE

VOLTAGE

RL = 50Ω

I

(REF) = 0.095 mA

G

V

= 10V

GS

0.75 BV

DSS

0.50 BV

DSS

0.25 BV

DSS

t, TIME (µs)

VDD = BV

I

G

20

IG (ACT)

DSS

(REF)

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (v)

GS

V

0

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

5-4