Intersil RFK70N06 Datasheet
RFK70N06
Data Sheet September 1998
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFET
The RFK70N06 N-Channel powerMOSFETismanufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER PACKAGE BRAND
RFK70N06 TO-204AE RFK70N06
NOTE: When ordering, use the entire part number.
File Number
Features
• 70A, 60V
•r
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
= 0.014Ω
DS(ON)
o
C Operating Temperature
Symbol
D
G
S
4331.1
Packaging
DRAIN
(FLANGE)
TO-204AE
SOURCE (PIN 2)
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFK70N06
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFK70N06 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS= 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DSS
DGR
DM
GS
AS
D
Refer to Peak Current Curve
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
60 V
60 V
70
±20 V
Refer to UIS Curve
150
1.0
-55 to 175
260
A
W
W/oC
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)VGS
g(TH)VGS
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V 60 - - V
= VDS, ID = 250µA 2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, VGS = 0V, TC = 150oC- - 25 µA
DSS
VGS = ±20V - - ±100 nA
= 70A, VGS = 10V (Figure 10) - - 0.014 Ω
VDD = 30V, I
VGS = 10V, RG = 2.5Ω
(Figures 14, 17, 18)
≈ 70A, R
D
= 0.43Ω,
L
- - 125 ns
-12- ns
-50- ns
-40- ns
-15- ns
- - 125 ns
= 0V to 20V VDD = 48V, I
= 0V to 10V - 100 115 nC
= 0V to 2V - 5.5 6.5 nC
RL = 0.68Ω,
I
G(REF)
(Figures 19, 20)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 13)
D
= 1.0mA
≈ 70A,
- 185 215 nC
- 3000 - pF
- 900 - pF
- 300 - pF
- - 1.0oC/W
--80oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Temperature curve (Figure 3).
2
ISD = 70A - - 1.5 V
SD
ISD = 70A, dISD/dt = 100A/µs - - 125 ns
rr
Typical Performance Curves
RFK70N06
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
125
0 25 50 75 100 175
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE
JC
θ
Z
0.01
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
80
70
60
50
40
30
, DRAIN CURRENT (A)
20
D
I
10
0
25
50
75 100 125 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
JC
1/t2
x R
2
JC
θ
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θ
0
10
+ T
150
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
TJ = MAX RATED
T
= 25oC
C
100µs
1ms
10ms
100ms
DC
10 100
1000
VGS = 10V
, PEAK CURRENT (A)
100
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
-5
10
-4
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-3
10
-2
10
t, PULSE WIDTH (s)
I = I
o
25
-1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
3
C DERATE PEAK
150 - T
C
125
0
10
1
10
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