Intersil RFK25N18, RFK25N20 Datasheet
RFK25N18, RFK25N20
October 1998 File Number 1500.3Data Sheet
25A, 180V and 200V, 0.150 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER PACKAGE BRAND
RFK25N18 TO-204AE RFK25N18
RFK25N20 TO-204AE RFK25N20
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN
(FLANGE)
Features
• 25A, 180V and 200V
•r
DS(ON)
= 0.150Ω
Symbol
D
G
S
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SOURCE (PIN 2)
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RFK25N18, RFK25N20
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFK25N18 RFK25N20 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
180 200 V
180 200 V
25 25 A
60 60 A
±20 ±20 V
150 150 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
260 260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0
RFK25N18 180 - - V
RFK25N20 200 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= VDS, ID = 250µA 2-4V
VDS= Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS,VGS
= 0V, TC= 125oC- - 25 µA
VGS = ±20V, VDS = 0V - - ±100 nA
= 25A, VGS = 10V (Figures 6, 7) - - 0.150 Ω
= 25A, VGS = 10V - - 3.75 V
≈ 12.5A, V
RL= 8 ,
(Figures 10, 11, 12)
= 100V, RG= 50 , VGS = 10V
DD
-4080ns
- 150 225 ns
- 300 400 ns
- 120 200 ns
VGS = 0V, VDS = 25V
f = 1MHz
(Figure 9)
- - 3500 pF
- - 900 pF
- - 400 pF
- - 0.83oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = 12.5A - - 1.4 V
SD
ISD= 4A, dISD/dt = 100A/µs - 300 - ns
rr
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