Intersil RFH12N35, RFH12N40 Datasheet
RFH12N35, RFH12N40
October 1998 File Number 1630.2Data Sheet
12A, 350V and 400V, 0.380 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Ordering Information
PART NUMBER PACKAGE BRAND
RFH12N35 TO-218AC RFH12N35
RFH12N40 TO-218AC RFH12N40
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-218AC
DRAIN
Features
• 12A, 350V and 400V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.380Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFH12N35, RFH12N40
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFH12N35 RFH12N40 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
350 400 V
350 400 V
12 12 A
24 24 A
±20 ±20 V
150 150 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFH12N35 350 - - V
RFH12N40 400 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction-to-Case R
DSS
GSS
r
f
ISS
OSS
RSS
θJC
= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
DSS,VGS
VDS= 0.8x Rated BV
= 0V - - 1 µA
DSS,VGS
= 0V,TC= 125oC- - 25 µA
VGS = ±20V, VDS = 0V - - ±100 nA
= 12A, VGS = 10V, (Figures 6, 7) - - 0.380 Ω
= 12A, VGS = 10V - - 4.56 V
≈ 6A, V
RL = 33Ω
(Figures 10, 11, 12)
= 200V, RG = 50Ω, VGS = 10V,
DD
-3050ns
- 105 150 ns
- 480 750 ns
- 140 200 ns
VGS = 0V, VDS = 25V, f = 1MHz,
(Figure 9)
- - 3000 pF
- - 900 pF
- - 400 pF
RFH12N35, RFH12N40 - - 0.83oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = 6A - - 1.4 V
SD
ISD = 4A, dISD/dt = 100A/µs - 950 - ns
rr
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