Intersil RFH10N45, RFH10N50 Datasheet

Semiconductor

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RFH10N45, RFH10N50

Data Sheet October 1998 File Number 1629.2

[ /Title
(RFH10
N45,
RFH10N

50)
Subject

(10A,
450V
and
500V,

0.600

Ohm,
N-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor,
N-Chan­nel
Power
MOS­FETs,
TO­218AC)

Creator

()

DOCIN

FO pdf­mark

10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.

Formerly developmental type TA17435.

Ordering Information

PART NUMBER PACKAGE BRAND

RFH10N45 TO-218AC RFH10N45
RFH10N50 TO-218AC RFH10N50

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-218AC

DRAIN

(FLANGE)

Features

• 10A, 450V and 500V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.600Ω

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFH10N45, RFH10N50S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFH10N45 RFH10N50 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

450 500 V
450 500 V

10 10 A

20 20 A
±20 ±20 V
150 150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFH10N45 450 V
RFH10N50 500 V

Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS= Rated BV

DSS

VDS= 0.8 x Rated BV

TC = 125oC--25µA

DSS,

--1µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 10A, VGS = 10V - - 6.0 V
= 10A, VGS = 10V (Figures 6, 7) - - 0.600 Ω

≈ 5A, V

R

= 50Ω, V

L

(Figures 10, 11, 12)

= 250V, R

DS

= 10V

GS

= 50Ω,

G

-2660ns

- 50 100 ns

- 525 900 ns

- 105 180 ns

VGS = 0V, VDS = 25V
f = 1MHz (Figure 9)

- - 3000 pF

- - 600 pF

- - 200 pF

- - 0.83oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 10A - - 1.4 V

SD

ISD = 10A, dISD/dt = 100A/µs - 950 - ns

rr