Intersil RFG60P06E Datasheet
RFG60P06E
Data Sheet July 1999
60A, 60V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
The RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG60P06E TO-247 RFG60P06E
NOTE: When ordering use the entire part numberr RFG60P06E.
File Number
Features
• 60A, 60V
DS(ON)
= 0.030Ω
•r
• Temperature Compensating PSPICE
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
Symbol
D
G
S
®
Model
3989.3
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
4-154
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999.
RFG60P06E
Absolute Maximum Ratings T
= 25oC
C
RFG60P06E UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
GS
DM
AS
SD
D
Refer to Peak Current Curve
-60 V
-60 V
±20 V
60
Refer to UIS Curve
2KV
A
MIL-STD-883, Category B(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
215
1.43
-55 to 175
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate To Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(-10)
g(TH)
ISS
OSS
RSS
θJC
θJA
ID = 250µA, VGS = 0V -60 - - V
VGS = VDS, ID = 250µA -2--4V
VDS = -60V,
VGS = 0V
TC = 25oC---1µA
= 150oC - - -50 µA
T
C
VGS = ±20V - - 100 nA
= 60A, VGS = -10V - - 0.030 W
VDD = -30V, ID = 30A,
RL = 1.0Ω, VGS = -10V,
RGS = 2.5Ω
- - 125 ns
-20- ns
-60- ns
-65- ns
-20- ns
- - 125 ns
VGS = 0 to -20V VDD = -48V,
VGS = 0 to -10V - - 225 nC
ID = 60A,
RL = 0.8Ω
- - 450 nC
VGS = 0 to -2V - - 15 nC
VDS = -25V, VGS = 0V,
f = 1MHz
- 7200 - pF
- 1700 - pF
- 325 - pF
- - 0.70
o
C/W
--80oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-155
ISD = 45A - - 1.5 V
ISD = 45A, dISD/dt = 100A/µs - - 125 ns
RFG60P06E
Typical Performance Curves
Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0.5
-70
-60
-50
-40
-30
-20
, DRAIN CURRENT (A)
D
I
-10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.2
0.1
0.1
NORMALIZED
θJC,
Z
THERMAL IMPEDANCE
0.05
0.02
0.01
SINGLE PULSE
0.01
-5
10
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-500
-100
-10
, DRAIN CURRENT (A)
I
OPERATION IN THIS
AREA MAY BE
D
LIMITED BY r
TC = 25oC
-1
-1 -10 -60
DS(ON)
V
MAX = -60V
DSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
3
-10
100µs
1ms
10ms
100ms
DC
, PEAK CURRENT (A)
-100
DM
TRANSCONDUCTANCE
I
MAY LIMIT CURRENT
IN THIS REGION
-50
-5
10
-1
10
VGS = -10V
-4
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1/t2
x R
θJC
θJC
0
10
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175 TC–
II
=
----------------------- -
25
150
-3
10
-2
10
-1
10
t, PULSE WIDTH (ms)
+ T
C
10
TC = 25oC
0
10
1
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-156
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