Intersil RFG60P05E Datasheet

RFG60P05E

Data Sheet July 1999

60A, 50V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET

This is a P-Channel powerMOSFETmanufacturedusingthe
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. It was
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. This type can be operated directly from integrated
circuits.

Formerly developmental type TA09835.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG60P05E TO-247 RFG60P05E

NOTE: When ordering, use the entire part number.

File Number

Features

• 60A, 50V

DS(ON)

= 0.030Ω

®

Model

•r

• Temperature Compensating PSPICE

• 2kV ESD Rated

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

2745.6

Packaging

DRAIN

(BOTTOM

SIDE METAL)

S

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

4-147

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG60P05E

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG60P05E UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

DS

GS

DM

AS
SD

D

Refer to Peak Current Curve

D

-50 V

-50 V

±20 V

60

215

1.43

A

W

W/oC

Refer to UIS Curve W/oC

2kV

MIL-STD-883, Category B(2)

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

(ON)

r

F

g(-10)
g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -50 - - V

= VDS, ID = 250µA -2--4V
VDS = -50V, VGS = 0V - - -1 µA
VDS = 0.8 x Rated BV

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±100 nA

= 60A, VGS = -10V (Figure 9) - - 0.030 Ω

VDD = -25V, ID = 30A, RL = 0.83Ω,
VGS = -10V, RGS = 2.5Ω
(Figure 13)

- - 125 ns

-20- ns

-60- ns

-65- ns

-20- ns

- - 125 ns
VGS = 0V to -20V VDD = -40V, ID = 60A,
VGS = 0V to -10V - - 225 nC
VGS = 0V to -2V - - 15 nC

RL = 0.67Ω
I

= -4mA

g(REF)

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 12)

- - 450 nC

- 7200 - pF

- 1700 - pF

- 325 - pF

- - 0.70oC/W

--30oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

RR

NOTE:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-148

ISD = -60A - - -1.75 V
ISD = -60A, dISD/dt = 100A/µs - - 200 ns

RFG60P05E

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

0.5

150

-70

-60

-50

-40

-30

-20

, DRAIN CURRENT (A)

D

I

-10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

0.1

0.05

THERMAL IMPEDANCE

0.01
10

0.02

0.01

-5

SINGLE PULSE

10

-4

10

, NORMALIZED TRANSIENT

θJC

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-500
TC= 25oC, TJ = MAX RATED

-100

-10

, DRAIN CURRENT (A)
I

OPERATION IN THIS

D

AREA MAY BE
LIMITED BY r

-1

-1 -10 -100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

V

DSS

MAX = -50V

-3

t, RECTANGULAR PULSE DURATION (s)

100ms

1ms

10ms

100ms
DC

-2

10

-500

, PEAK CURRENT (A)

-100

DM

I

-50

-5

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-1

10

VGS = -10V

-4

10

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

0

10

TC = 25oC
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

I I

=

-3

10

t, PULSE WIDTH (s)

-2

10

2

1/t2

x R

θJC

θJC

175 T



--------------------- -



25



-1

10

150

–

10

+ T

C

1

10

C

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-149