Intersil RF1S50N06SM, RFG50N06, RFP50N06 Datasheet
RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relaydrivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG50N06 TO-247 RFG50N06
RFP50N06 TO-220AB RFP50N06
RF1S50N06SM TO-263AB F1S50N06
NOTE: When ordering, use theentire part number .Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A.
Features
• 50A, 60V
DS(ON)
= 0.022Ω
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
Symbol
D
G
S
®
Model
3575.4
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
DRAIN
GATE
4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFG50N06, RFP50N06
RF1S50N06SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
GS
D
DM
AS
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
±20 V
50
(Figure 5)
(Figure 6, 14, 15)
131
0.877
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(10)
g(TH)
ISS
OSS
RSS
θJC
θJA
ID = 250µA, VGS = 0V (Figure 11) 60 - - V
VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 60V,
VGS = 0V
TC = 25oC--1µA
TC = 150oC--50µA
VGS = ±20V - - ±100 nA
= 50A, VGS = 10V (Figures 9) - - 0.022 Ω
VDD = 30V, ID = 50A
RL = 0.6Ω, VGS = 10V
RGS = 3.6Ω
(Figure 13)
- - 95 ns
-12 - ns
-55 - ns
-37 - ns
-13 - ns
- - 75 ns
VGS = 0 to 20V VDD = 48V, ID = 50A,
VGS = 0 to 10V - 67 80 nC
VGS = 0 to 2V - 3.7 4.5 nC
RL = 0.96Ω
I
= 1.45mA
g(REF)
(Figure 13)
VDS = 25V, VGS = 0V
f = 1MHz
(Figure 12)
- 125 150 nC
- 2020 - pF
- 600 - pF
- 200 - pF
(Figure 3) - - 1.14
TO-247 - - 30
TO-220, TO-263 - - 62
o
o
o
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
4-468
SD
rr
ISD = 50A - - 1.5 V
ISD = 50A, dISD/dt = 100A/µs - - 125 ns
RFG50N06, RFP50N06, RF1S50N06SM
Typical Performance Curves
Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.2
0.1
0.1
THERMAL IMPEDANCE
0.05
0.02
0.01
, NORMALIZED
θJC
Z
SINGLE PULSE
0.01
-5
10
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1 10 100
DS(ON)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
DSS(MAX)
T
= MAX RATED
J
SINGLE PULSE
= 60V
-3
10
-2
10
t1, RECTANGULAR PULSE DURATION (s)
3
10
TC = 25oC
100µs
1ms
, PEAK CURRENT (A)
10ms
100ms
2
10
DM
I
DC
40
10-310
-1
10
VGS = 20V
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-2
-1
10
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1/t2
x R
θJC
θJC
0
10
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175 TC–
II
=
----------------------- -
25
150
TC = 25oC
0
10
1
10
2
10
10
t, PULSE WIDTH (ms)
+ T
C
1
10
3
4
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-469
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