Intersil RFG50N05L, RFP50N05L Datasheet

RFG50N05L, RFP50N05L

Data Sheet July 1999

50A, 50V, 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG50N05L TO-247 RFG50N05L
RFP50N05L TO-220AB RFP50N05L

NOTE: When ordering, usetheentirepartnumber .Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e.,RFP50N05L9A.

File Number

2424.3

Features

• 50A, 50V

DS(ON)

= 0.022Ω

•r

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drive

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

Packaging

DRAIN

(BOTTOM

SIDE METAL)

S

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

6-212

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG50N05L, RFP50N05L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG50N05L RFP50N05L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS

D

DM

GS

D

50 50 V
50 50 V
50

130

50

130
±10 ±10 V
110

0.88

110

0.88

W/oC

A
A

W

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Refer to UIS SOA Curve -

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

DSSID

GS(TH)VGS

DSS

GSS

= 250µA, VGS = 0V (Figure 10) 50 - - V

= VDS, ID = 250µA (Figure 9) 1 - 2 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0 - - 25 µA

DSS

, VGS = 0, TC = 150oC - - 250 µA

DSS

VGS = ±10V, VDS = 0V - - ±100 nA

= 50A, VGS = 5V (Figure 7) - - 0.022 Ω

ID = 50A, VGS = 4V - - 0.027 Ω

Turn-On Time t
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)

G(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

(ON)

G(th

VGS = 5V, RGS = 2.5Ω, RL = 1Ω
(Figures 12, 15, 16)

r

- - 100 ns

-15- ns

-50- ns

-50- ns

f

-15- ns

- - 100 ns

= 0 to 10V VDD = 40V, ID = 50A
VGS = 0 to 5V - - 80 nC

G(5)

RL = 0.8Ω
(Figures 17, 18)

- - 140 nC

)VGS = 0 to 1V - - 6 nC

θJC
θJA

- - 1.14oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.

3. Repititive rating: pulse width limited by maximum junction temperature.

6-213

ISD = 50A - - 1.5 V
ISD = 50A, dISD/dt = 100A/µs - - 1.25 ns

rr