Intersil RFG50N05, RFP50N05 Datasheet
RFG50N05, RFP50N05
Data Sheet July 1999 File Number
50A, 50V, 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET’S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG50N05 TO-247 RFG50N05
RFP50N05 TO-220AB RFP50N05
NOTE: When ordering, include the entire part number.
Features
• 50A, 50V
DS(ON)
= 0.022Ω
•r
• UIS Rating Curve (Single Pulse)
o
C Operating Temperature
• 175
Symbol
D
G
S
2873.3
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFG50N05, RFP50N05
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFG50N05, RFP50N05 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
50 V
50 V
50 A
120 A
±20 V
132 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.88 W/oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, T
as
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
Refer to UIS SOA Curve
-55 to 175
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VDS
DSS
Zero Gate Voltage Drain Current, VDS = 0.8 x Rated BV
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
DS(ON)ID
(ON)
d(ON)
r
d(OFF)
f
(OFF)
g(tot)VGS
g(10)VGS
g(th)
θJC
θJA
= 0.250µA, VGS = 0V (Figure 9) 50 - - V
= VGS, ID = 0.250µA (Figure 8) 2.0 - 4.0 V
VDS = Rated BV
, VGS = 0V - - 1 A
DSS
, VGS = 0V, TJ = 150oC- -25µA
DSS
VGS = ±20V - - ±100 nA
= 50A, VGS = 10V (Figure 7) - - 0.022 Ω
VDD = 25V, I
RGS = 6.67Ω, VGS = 10V
(Figure 11)
≈ 25A, R
D
= 1.0Ω,
L
- - 100 ns
-15- ns
-55- ns
-60- ns
-15- ns
- - 100 ns
= 0-20V VDD - 40V, ID = 50A
= 0-10V - - 80 nC
RL = 0.8Ω, I
(Figure 11)
G(REF)
= 1.5mA
- - 160 nC
VGS = 0-2V - - 6 nC
- - 1.14oC/W
TO-220 - - 62
TO-247 30
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulsed test: pulse width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
4-463
ISD = 50A - 1.5 V
SD
ISD = 50A, dlSD/dt = 100A/µs - 125 ns
rr
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