Intersil RFG40N10LE, RFP40N10LE Datasheet

RFG40N10LE, RFP40N10LE, RF1S40N10LESM

Data Sheet October 1999 File Number 4061.5

40A, 100V, 0.040 Ohm, Logic Level
N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switchingregulators,switching converters, motor drivers and
relaydrivers.These transistorscan be operated directly from
integrated circuits.

Formerly developmental type TA49163.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG40N10LE TO-247 FG40N10L
RFP40N10LE TO-220AB FP40N10L
RF1S40N10LESM TO-263AB F40N10LE

NOTE: When ordering, use the entire partnumber.Addthe suffix, 9A, to
obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10LESM9A.

Features

• 40A, 100V

•r

DS(ON)

• Temperature Compensating PSPICE

= 0.040Ω

®

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-263AB

DRAIN

GATE

SOURCE

(FLANGE)

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG40N10LE, RFP40N10LE, RF1S40N10LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG40N10LE, RFP40N10LE,

RF1S40N10LESM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100 V
100 V
±10 V

40

Refer to UIS Curve

150

1.00

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V (Figure 13) 100 - - V

= VDS, ID = 250µA (Figure 12) 1 - 3 V

VDS = 95V, VGS = 0V - - 1 µA

= 90V, VGS = 0V, TC = 150oC - - 250 µA

V

DS

VGS = ±10V - - 10 µA

= 40A, VGS = 5V - - 0.040 Ω

VDD = 50V, ID = 40A, RL = 1.25Ω,
VGS = 5V, RGS = 2.5Ω
(Figures 10, 18, 19)

- - 200 ns

-22-ns

- 140 - ns

-70-ns

-65-ns

- - 165 ns

= 0V to 10V VDD = 80V,
VGS = 0V to 5V - 85 105 nC
VGS = 0V to 1V - 3 4 nC

ID = 40A,
RL = 2.0Ω
(Figures 20, 21)

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 14)

- 145 180 nC

- 3000 - pF

- 500 - pF

- 200 - pF
All Packages - - 1.0
TO-247 - - 30
TO-220AB and TO-263AB - - 80

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

2

ISD = 40A - - 1.5 V
ISD = 40A, dISD/dt = 100A/µs - - 205 ns

rr

RFG40N10LE, RFP40N10LE, RF1S40N10LESM

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

1

0.5

0.2

0.1

THERMAL IMPEDANCE

0.01
10

0.1

0.05

0.02

0.01

-5

SINGLE PULSE

10

-4

-3

10

t, RECTANGULAR PULSE DURATION (s)

, NORMALIZED

θJC

Z

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

2

1/t2

x R

θJC

0

10

θJC

+ T

175

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

T

= 175oC

J

100µs

1ms

10ms

200

500

100

THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-5

10

TC = 25oC

-4

10

VGS = 10V
VGS = 5V

-3

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 T



II

=

-----------------------



25



-2

10

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

150

–

C

0

10

1

10