Intersil RF1S40N10SM, RFG40N10, RFP40N10 Datasheet

RFG40N10, RFP40N10, RF1S40N10SM

Data Sheet July 1999 File Number

40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA9846

Ordering Information

PART NUMBER PACKAGE BRAND

RFG40N10 TO-247 RFG40N10
RFP40N10 TO-220AB RFP40N10
RF1S40N10SM TO-263AB F1S40N10

NOTE: When ordering, use theentire part number .Add the suffix, 9A,
to obtain the TO-263ABvariant intape and reel, i.e.RF1S40N10SM9A.

Features

• 40A, 100V

•r

DS(ON)

= 0.040Ω

• UIS Rating Curve

• SOA is Power Dissipation Limited

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2431.3

Packaging

DRAIN

(FLANGE)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE
SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-450

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG40N10, RFP40N10, RF1S40N10SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG40N10, RFP40N10,

RF1S40N10SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

100 V
100 V
±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

40

100

Figures 4, 12, 13

160

1.07

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTES:

1. TJ = 25oC to 150oC.

2. Repetitive Rating: pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

θJC

θJA

= 250µA, VGS = 0V (Figure 9) 100 - - V

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS = 80V,
VGS = 0V

TC = 25oC--1µA
TC = 150oC--50µA

VGS = ±20V - - ±100 nA

= 40A, VGS = 10V (Figure 7) - - 0.040 Ω

VDD = 50V, ID = 20A,
RL = 2.5Ω, VGS = 10V, RGS = 4.2 Ω
(Figure 11)

- - 80 ns

-17- ns

-30- ns

-42- ns

-20- ns

- - 100 ns

= 0V to 20V VDD = 80V,
VGS = 0V to 10V - - 150 nC
VGS = 0V to 2V - - 7.5 nC

ID = 40A,
RL = 2.0Ω
(Figures 11)

TO-247 - - 30
TO-220AB and TO-263AB - - 62

- - 300 nC

- - 0.94

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

4-451

SD

rr

ISD = 40A - - 1.5 V
ISD = 40A, dISD/dt = 100A/µs - - 200 ns