Intersil RF1S30P06SM, RFG30P06, RFP30P06 Datasheet

RFG30P06, RFP30P06, RF1S30P06SM

Data Sheet July 1999

30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs

These are P-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA09834.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG30P06 TO-247 RFG30P06
RFP30P06 TO-220AB RFP30P06
RF1S30P06SM TO-263AB F1S30P06

NOTE: Whenordering, use the entire part number.Addthesuffix9A
to obtain the TO-263ABvariant in tape andreel, i.e. RF1S30P06SM9A.

File Number

Features

• 30A, 60V

DS(ON)

= 0.065Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2437.3

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

4-133

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG30P06, RFP30P06, RF1S30P06SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG30P06, RFP30P06

RF1S30P06SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-60 V

-60 V

±20 V

30

Refer to UIS Curve

135

0.9

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

(ON)

r

f

g(-10)
g(TH)

ISS
OSS
RSS

θJC
θJA

ID = 250µA, VGS = 0V -60 - - V
VGS = VDS, ID = 250µA -2 - -4 V
VDS = -60V, VGS = 0V - - -1 µA
VDS = 0.8 x Rated BV

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±100 nA
ID = -30A, VGS = -10V (Figure 9) - - 0.065 Ω
VDD = -30V, ID = 15A, RL = 2.00Ω, VGS = -10V

RG = 6.25Ω
(Figure 13)

- - 80 ns

-15-ns

-23-ns

-28-ns

-18-ns

- - 100 ns
VGS = 0 to -20V VDD = -48V, ID = 30A,
VGS = 0 to -10V - 70 85 nC
VGS = 0 to -2V - 5.5 6.6 nC

RL = 1.6Ω,
I

= 1.6mA

G(REF)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 140 170 nC

- 3200 - pF

- 800 - pF

- 175 - pF

- - 1.11oC/W
TO-220, TO-263 - - 62oC/W
TO-247 30oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MAX

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

RR

NOTE:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-134

ISD = -30A - - -1.5 V
ISD = -30A, dISD/dt = -100A/µs - - 150 ns

RFG30P06, RFP30P06, RF1S30P06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100 125 150 1750

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

-40

-30

-20

, DRAIN CURRENT (A)

D

-10

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

, NORMALIZED

θJC

Z

-200

-100

-10

, DRAIN CURRENT (A)

D

I

-1

-1

0.05

THERMAL IMPEDANCE

0.02

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

TC = 25oC
TJ = MAX RATED

-10

, DRAIN TO SOURCE VOLTAGE (V)

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

-100

-2

10

-500

-100

, PEAK CURRENT (A)

DM

I

-10
10

-1

10

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

II

=

-3

10

t, PULSE WIDTH (s)

-2

10

1/t2

x R

θJC

θJC

0

10

175 T

–




25



--------------------- -

150

-1

10

C

+ T

C

10

TC = 25oC

0

10

1

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-135