Intersil RFF70N06 Datasheet

RFF70N06

Data Sheet March 1999

25A, 60V, 0.025 Ohm, N-Channel Power
MOSFET

The RFF70N06 N-Channel powerMOSFETismanufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.

Formerly developmental type TA49007.

Ordering Information

PART NUMBER PACKAGE BRAND

RFF70N06 TO-254AA RFF70N06

NOTE: When ordering, use the entire part number.

File Number

Features

• 25A†, 60V

DS(ON)

= 0.025Ω

•r

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 150

• Reliability Screened

Current is limited by the package capability.

†

Symbol

D

G

S

4073.2

Commercial Version: RFG70N06.

Packaging

JEDEC TO-254AA

GATE

PACKAGE TAB

(ISOLATED)

CAUTION: Berylia Warning per MIL-S-19500.

Refer to package specifications.

SOURCE

DRAIN

4-442

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFF70N06

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFF70N06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 4) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

60 V
60 V

±20 V

25 (Note 2)

Refer to UIS Curve

100

0.80

-55 to 150

260

A

W

W/oC

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

2. Current is limited by the package capability.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 3) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

ISS

OSS

RSS

θJC
θJA

= 250µA, VGS = 0V 60 - - V

= VDS, ID = 250µA 2.0 3.0 4.5 V

VDS = Rated BV

DSS, VGS

VDS= 0.8 x Rated BV

= 0V - - 25 µA

DSS,VGS

= 0V, TC= 125oC - - 250 µA

VGS = ±20V, TC = 125oC--±100 µΑ

= 25A, VGS = 10V - - 0.025 Ω

VDD = 30V, I
VGS = 10V, RGS = 2.35Ω
(Figures 13, 16, 17)

≈ 25A, R

D

= 1.2Ω,

L

- - 240 ns

-2570 ns

- 70 170 ns

- 60 150 ns

-2565 ns

- - 215 ns

= 0 to 20V VDD = 30V, ID = 25A,
VGS = 0 to 10V - - 145 nC
VGS = 0 to 2V - - 7 nC

RL = 1.2Ω
I

= 1.0mA

G(REF)

(Figures 18, 19)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- - 260 nC

- 3100 - pF

- 900 - pF

- 300 - pF

- - 1.25

o

C/W

--48oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

3. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

4. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve Figure 3).

4-443

ISD = 25A - 1.1 1.5 V
ISD = 25A, dISD/dt = 100A/µs - 190 300 ns

RFF70N06

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

100755025

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.5

0.2

0.1

0.1

, NORMALIZED
Z

500

100

10

, DRAIN CURRENT (A)

D

I

1

0.05

JC

θ

THERMAL IMPEDANCE

0.02

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = 60V

DSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

10 100

-3

10

t, RECTANGULAR PULSE DURATION (s)

TC = 25oC

100µs

1ms

10ms
100ms

DC

-2

10

3

10

2

10

, PEAK CURRENT (A)

DM

I

1

10

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION V

-5

-4

10

10

P

DM

0

10



=

II



25



= 10V

GS

-3

t, PULSE WIDTH (s)

-2

10

t

1

t

2

1/t2

x R

JC

θ

150 T

--------------------- -

-1

10

θ

–

125

+ T

JC

C

10

C

TC = 25oC

0

10

1

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-444