Intersil RFF60P06 Datasheet

RFF60P06

Data Sheet September 1998

25A†, 60V, 0.030 Ohm, P-Channel Power
MOSFET

The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It wasdesignedforusein applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.

Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
† Current is limited by the package capability.

Ordering Information

File Number

Features

• 25A, 60V

DS(ON)

= 0.030Ω

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 150

• Reliability Screened

Symbol

D

G

S

®

Model

3975.2

PART NUMBER PACKAGE BRAND

RFF60P06 TO-254AA RFF60P06

NOTE: When ordering, use the entire part number.

Packaging

PACKAGE TAB

(ISOLATED)

CAUTION: Berylia Warning per MIL-S-19500.

JEDEC TO-254AA

GATE

SOURCE

DRAIN

Refer to package specifications.

4-181

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFF60P06

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFF60P06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

-60 V

-60 V

±20 V

25 (Note 5)

Refer to UIS Curve

125

1.0

-55 to 150

260

A

W

W/oC

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at -10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -60 - - V

= VDS, ID = 250µA -2.0 -3.0 -4.5 V

VDS = Rated BV

DSS,VGS

VDS = 0.8 x Rated BV

= 0V - - -25 µA

, VGS = 0V, TC = 125oC - - -250 µA

DSS

VGS = ±20V, TC = 125oC--±100 µA

= 25A, VGS = -10V, (Figure 9) - - 0.030 Ω

VDD = -30V, ID = 25A, RL = 1.2Ω, VGS = -10V
RG = 2.35Ω
(Figures 13, 16, 17)

- - 195 ns

-2570ns

- 50 125 ns

- 80 200 ns

-3075ns

- - 275 ns
= 0 to -20V VDD = -30V, ID = 25A,
= 0 to -10V - - 225 nC
= 0 to -2V - - 15 nC

RL = 1.2Ω
I

= -4.2mA

G(REF)

(Figures 18, 19)

VDS = -25V, VGS = 0V
f = 1MHz

- - 450 nC

- 7200 - pF

- 1800 - pF

- 400 - pF

- - 1.0

o

C/W

--48oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

4. Current is limited by package capability.

4-182

ISD = -25A - -1.1 -1.5 V

SD

ISD = -25A, dISD/dt = -100A/µs - 130 200 ns

rr

RFF60P06

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

-30

-25

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5
0

100755025

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

-500

-100

-10

, DRAIN CURRENT (A)

D

I

-1

0.05

0.02

THERMAL IMPEDANCE

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

TC = 25oC

= MAX RATED

T

J

-1
V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = -60V

DSS

-10 -100

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

-2

10

3

-10

2

-10

, PEAK CURRENT (A)

DM

I

1

-10
10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION V

-5

-4

10

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

–

125

+ T

JC

θ

C

TC = 25oC

0

10

C

1

10

1

10

JC

θ

0

10

150 T



II

= -10V

GS

-3

-2

10

--------------------- -

=



25



-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-183