Intersil RFD8P06E, RFD8P06ESM, RFP8P06E Datasheet

RFD8P06E, RFD8P06ESM, RFP8P06E

Data Sheet July 1999

8A, 60V, 0.300 Ohm, P-Channel Power
MOSFETs

These are P-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.

The RFD8P06E,RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.

Formerly developmental type TA49044.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP8P06E TO-220AB RFP8P06E
RFD8P06ESM TO-252AA D8P06E
RFD8P06E TO-251AA D8P06E

NOTE: Whenordering, use the entirepart number.Addthesuffix9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.

File Number

Features

• 8A, 60V

DS(ON)

= 0.300Ω

®

Model

•r

• Temperature Compensating PSPICE

• 2kV ESD Protected

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3937.5

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

4-117

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

DRAIN (FLANGE)

PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999.

SOURCE

DRAIN

GATE

RFD8P06E, RFD8P06ESM, RFP8P06E

Absolute Maximum Ratings T

= 25oC

C

RFD8P06E, RFD8P06ESM, RFP8P06E UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GS

DM

AS

D

Refer to Peak Current Curve

D

-60 V

-60 V

±20 V

8

Refer to UIS Curve

48

0.32

A
A

W

W/oC

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 3) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -60 - - V

= VDS, ID = 250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -1.0 µA

DSS

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±10 µA

= 8A, VGS = -10V - - 0.300 Ω

VDD = -30V, I
RL = 3.75Ω, VGS = -10V, RG = 2.5Ω
(Figure 13)

D

≈ 8A,

- - 70 ns

-15-ns

-30-ns

-40-ns

-25-ns

- - 100 ns
= 0 to -20V VDD = -48V, ID = 8A,
= 0 to -10V - 15 18 nC
= 0 to -2V - 1.15 1.5 nC

RL = 6Ω
I

g(REF)

= -1.45mA

VDS = -25V, VGS = 0V,
f = 1MHz

-3036nC

- 600 - pF

- 160 - pF

-35-pF

Figure 12 - - 3.125oC/W
TO-220 - - 62
TO-251, TO-252 - - 100

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-118

ISD = -8A - - -1.5 V
ISD = -8A, dISD/dt = -100A/µs - - 125 ns

RFD8P06E, RFD8P06ESM, RFP8P06E

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

-10

-8

-6

-4

, DRAIN CURRENT (A)

D

I

-2

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

0.1

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

, NORMALIZED

θJC

Z

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

-100
TC = 25oC, TJ = MAX RATED

-10

-1

, DRAIN CURRENT (A)

D

I

-0.1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1 -10 -100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

-2

t1, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

10

2

-10

, PEAK CURRENT (A)

DM

-10

I

-5
10

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-6

10

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-5

-4

10

10

t, PULSE WIDTH (s)

II

-3

0

10

=

10

2

1/t2

x R

θJC

175 T

–

--------------------- -

150

-1

10

+ T

C

C

TC = 25oC

0

10

θJC




25



-2

1

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-119