Intersil RFD8P05, RFD8P05SM, RFP8P05 Datasheet
RFD8P05, RFD8P05SM, RFP8P05
Data Sheet July 1999
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD8P05 TO-251AA D8P05
RFD8P05SM TO-252AA D8P05
RFP8P05 TO-220AB RFP8P05
NOTE: Whenordering, use theentirepart number.Addthe suffix9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
File Number
Features
• 8A, 50V
DS(ON)
= 0.300Ω
•r
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
2384.2
Packaging
DRAIN (FLANGE)
JEDEC TO-220AB JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
SOURCE
DRAIN
GATE
4-112
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999.
RFD8P05, RFD8P05SM, RFP8P05
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFD8P05,
RFD8P05SM, RFP8P05 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
-50 V
-50 V
-8 A
-20 A
±20 V
48 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
See Figure 6
-55 to 175
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications T
= 25oC Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at -5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(-10)VGS
g(TH)VGS
θJC
θJA
= 250µA, VGS = 0V (Figure 9) -50 - - V
= VDS, ID = 250µA (Figure 8) -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, TJ = 150oC--25µA
DSS
VGS = ±20V - - ±100 nA
= 8A, VGS = -10V (Figure 7) - - 0.300 Ω
VDD = -25V, I
VGS = -10V
≈ 4A, R
D
= 9.1Ω, RL = 6.25Ω,
G
- - 60 ns
-16- ns
-30- ns
-42- ns
-20- ns
- - 100 ns
= 0 to -20V VDD = -40V, ID = 8A,RL = 5Ω,
I
= -0.3mA
= 0 to -10V - - 40 nC
G(REF)
- - 80 nC
= 0 to -2V - - 2 nC
- - 3.125oC/W
TO-251AA, TO-252AA - - 100oC/W
TO-220AB 62.5oC/W
Source to Drain Diode Specifications T
= 25oC Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
SD
ISD = -8A - - -1.5 V
ISD = -8A, dISD/dt = 100A/µs - - 125 ns
rr
NOTE:
2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
4-113
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