Intersil RFD7N10LE, RFD7N10LESM Datasheet

RFD7N10LE, RFD7N10LESM

Data Sheet October 1999

7A, 100V, 0.300 Ohm, N-Channel, Logic
Level, Power MOSFETs

These N-Channel power MOSFETs are manufacturedusing
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relaydriversand emitter switches forbipolar transistors.This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49046.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD7N10LE TO-251AA 7N10L
RFD7N10LESM TO-252AA 7N10LE

NOTE: When ordering, use theentirepart number. Addsuffix9A toob­tain the TO-252AA variant in the tape and reel, i.e., RFD7N10LESM9A.

File Number 3598.3

Features

• 7A, 100V

DS(ON)

= 0.300Ω

®

Model

•r

• Temperature Compensating PSPICE

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

(FLANGE)

DRAIN

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD7N10LE, RFD7N10LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD7N10LE,

RFD7N10LESM UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

100 V
100 V

+10, -8 V

Drain Current

Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DM

AS

D

Refer to Peak Current Curve

Refer to UIS Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

7

47

0.318

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSS

GS(TH)

DSS

ID = 250µA, VGS = 0V 100 - - V
VGS = VDS, ID = 250µA1-3V
VDS = 95V, VGS = 0V - - 1 µA

VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA
Gate to Source Leakage Current I
On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

VGS = +10, -8V - - 10 µA

= 7A, VGS = 5V - - 0.300 Ω

VDD = 50V, ID = 7A
RL = 7.1Ω, VGS = 5V
RGS = 2.5Ω

- - 110 ns

-10- ns

-65- ns

-23- ns

-18- ns

- - 60 ns
VGS = 0 to 10V VDD = 80V
VGS = 0 to 5V - 67 80 nC

ID = 7A,
RL = 11.4Ω

- 125 150 nC

VGS = 0 to 1V - 3.7 4.5 nC
VDS = 25V, VGS = 0V

f = 1MHz

- 360 - pF

-70- pF

-20- pF

- - 3.15
TO-251 and TO-252 Package - - 100

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

2

SD

rr

ISD = 7A - - 1.5 V
ISD = 7A, dISD/dt = 100A/µs - - 130 ns

RFD7N10LE, RFD7N10LESM

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0

25 50 75 100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

NORMALIZED

0.02

θJC,

0.01

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

8

6

4

, DRAIN CURRENT (A)

2

D

I

1750

0

25 50 75 100

125 150

175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

θJC

2

X R

θJC

2

+ T

C

1

10

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM X Z

-2

10

-1

10

0

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

20
14

10

1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(ON)

TC = 25oC

0.1

J

V

DSS

MAX = 100V

T

= MAX RATED

1 10 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

100µs

1ms

10ms

20

14

VGS = 5V

10

, PEAK CURRENT (A)
I

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

DM

I = I

5

-3

10

10

25

-2

o

C DERATE PEAK

175 - T

(

10

C

150

-1

10

t, PULSE WIDTH (ms)

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

)

1

0

10

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

2

10

4

3

10