Intersil RFD3N08L, RFD3N08LSM Datasheet

RFD3N08L, RFD3N08LSM

Data Sheet July 1999

3A, 80V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel
enhancement mode silicon gate powerfieldeffecttransistors
specifically designed for use with logic level (5V) driving
sources in applications such as programmable controllers,
automotive switching, and solenoid drivers. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.

Formerly developmental type TA09922.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3N08L TO-251AA F3N08L
RFD3N08LSM TO-252AA F3N08L

NOTE: When ordering,include the entirepartnumber.Add the suffix9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A

File Number

Features

• 3A, 80V

DS(ON)

= 0.800Ω

®

Model

•r

• Temperature Compensating PSPICE

• On Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2836.4

Packaging

(FLANGE)

DRAIN

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

6-26

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD3N08L, RFD3N08LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD3N08L,

RFD3N08LSM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Figures 3, 5) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

DGR

GS

DM

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed Avalanche Energy Rating (Figure 6) (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

80 V
80 V

±10 V

3

30

0.2

Refer to UIS Curve

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 12) 80 - - V

= VDS, ID = 250µA (Figure 11) 1 - 2.5 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

DSS

,

- - 250 µA

VGS = 0V 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Characterisics C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

GSS

(ON)

g(TH)VGS

OSS
RSS

VGS = ±10V - - ±100 nA

= 3A, VGS = 5V, (Figures 9, 10) - - 0.800 Ω

VDD = 40V, ID = 3A,
RL = 13.3Ω, VGS = 5V,
RG = 25Ω,
(Figures 13, 15, 18, 19)

r

- - 75 ns

-15 - ns

-45 - ns

-22 - ns

f

-15 - ns

- - 45 ns

= 0V to 10V VDD = 64V, ID = 3A,

I

= 0.1mA

VGS = 0V to 5V - 3.8 4.8 nC

g(5)

= 0V to 1V - 0.18 0.24 nC

VDS = 25V, VGS = 0V, f = 1MHz,

ISS

g(REF)

RL = 21.3Ω
(Figures 15, 20, 21)

(Figure 14)

- 6.8 8.5 nC

- - 125 pF

- - 55 pF

- - 15 pF

θJC
θJA

- - 5.0

- - 100

o
o

C/W
C/W

Source to Drain Diode Ratings and Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

SDISD

rr

NOTES:

2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. Refer to Intersil Application Notes AN9321 and AN9322.

6-27

= 3A - - 1.25 V

ISD = 3A, dISD/dt = 100A/µs--85ns

RFD3N08L, RFD3N08LSM

Typical Performance Curves

Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATIONvs CASE

TEMPERATURE

1

0.5

150

175

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

175

0.2

0.1

0.1

0.05

0.02

, NORMALIZED TRANSIENT

θJC

Z

0.01
10

-5

SINGLE PULSE

10

-4

0.01

THERMAL IMPEDANCE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

20

10

1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1
1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

V

MAX = 80V

DSS

TC = 25oC

= MAX RATED

T

J

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

30

100µs

10

1ms

10ms

100ms
DC

200

, PEAK CURRENT CAPABILITY (A)

DM

I

1
10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

VGS = 10V

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

10

P

DM

0

10

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

25

-3

-2

10

t, PULSE WIDTH (s)

t
t

1/t2

x R

θJC

175 - T

TC = 25oC

-1

10

1
2

150

θJC

+ T

C

1

10

C

0

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-28