Intersil RFD3055LE, RFD3055LESM Datasheet

RFD3055LE, RFD3055LESM, RFP3055LE

Data Sheet November 1999

11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs

These N-Channel enhancement-mode powerMOSFETsare
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA49158.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3055LE TO-251AA F3055L
RFD3055LESM TO-252AA F3055L
RFP3055LE TO-220AB FP3055LE

NOTE: Whenordering,use theentire part number.Add thesuffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.

File Number 4044.3

Features

• 11A, 60V

DS(ON)

= 0.107Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

SOURCE

DRAIN

GATE

6-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD3055LE, RFD3055LESM, RFP3055LE

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD3055LE, RFD3055LESM,

RFP3055LE UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

±16 V

11

Refer to UIS Curve

38

0.25

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSS

GS(TH)

DSS

ID = 250µA, VGS = 0V 60 - - V
VGS = VDS, ID = 250µA1-3V
VDS = 55V, VGS = 0V - - 1 µA

VDS = 50V, VGS = 0V, TC = 150oC - - 250 µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC
θJA

VGS = ±16V - - ±100 nA

= 8A, VGS = 5V (Figure 11) - - 0.107 Ω

V

≈ 30V, I

DD

VGS = 4.5V, RGS = 32Ω
(Figures 10, 18, 19)

= 8A,

D

- - 170 ns

-8- ns

- 105 - ns

-22- ns

-39- ns

- - 92 ns

VGS = 0V to 10V VDD = 30V, ID = 8A,

I

= 1.0mA

VGS = 0V to 5V - 5.2 6.2 nC

g(REF)

(Figures 20, 21)

- 9.4 11.3 nC

VGS = 0V to 1V - 0.36 0.43 nC
VDS = 25V, VGS = 0V, f = 1MHz

(Figure 14)

- 350 - pF

- 105 - pF

-23- pF

- - 3.94oC/W
TO-220AB - - 62
TO-251AA, TO-252AA - - 100

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-2

ISD = 8A - 1.25 V
ISD = 8A, dISD/dt = 100A/µs - 66 ns

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWER DISSIPATIONvs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

175

15

VGS= 10V

10

VGS= 4.5V

5

, DRAIN CURRENT (A)

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUMCONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

x R

θJC

t

1

+ T

t

2

C

1

10

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

100

10

OPERATION IN THIS
AREA MAY BE

1

LIMITED BY r

, DRAIN CURRENT (A)

D

I

SINGLE PULSE

TJ = MAX RATED

DS(ON)

T

= 25oC

C

0.1
1 10 100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

100µs

1ms

10ms

200

200

100

, PEAK CURRENT (A)

DM

I

10

10

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

TC = 25oC
FOR TEMPERATURES

ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

-2

10

t, PULSE WIDTH (s)

o

25

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-3

C DERATE PEAK

175 - T

C

150

0

10

1

10

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Specified (Continued)

100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Intersil Application Notes AN9321 and AN9322

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

12

9

15

12

, DRAIN CURRENT (A)

D

I

= 10V

V

GS

VGS = 5V

9

6

PULSE DURATION = 80µs

3

TC = 25oC

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

VGS = 4V

VGS = 3.5V

VGS = 3V

FIGURE 7. SATURATION CHARACTERISTICS

150

120

I

D

= 3A

I

D

= 11A

= 5A

I

D

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 25oC

T

C

6

TJ = 25oC

DRAIN CURRENT (A)

3

D,

I

TJ = 175oC

0

2345

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE

90

ON RESISTANCE (mΩ)

DS(ON)

r

60

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

150

VGS = 4.5V, VDD = 30V, ID = 8A

t

r

100

t

50

SWITCHING TIME (ns)

0

0 1020304050

RGS, GATE TO SOURCE RESISTANCE (Ω)

t

d(OFF)

t

d(ON)

f

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 11A

FIGURE 10. SWITCHING TIME vs GATE RESISTANCE FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

6-4

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Specified (Continued)

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 12. NORMALIZEDGATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

1000

C

= CGS + C

C

≅ CDS+ C

100

C, CAPACITANCE (pF)

10

OSS

VGS= 0V, f = 1MHz

0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)

GD

ISS

C

RSS

= C

GD

GD

FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1.2
ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

10

VDD = 30V

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

60

0246810

Qg, GATE CHARGE (nC)

WAVEFORMS IN
DESCENDING ORDER:

ID = 11A
I

= 5A

D

I

= 3A

D

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 15. NORMALIZEDSWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

t

0V

P

AS

R

G

DUT

I

AS

0.01Ω

+

V

DD

-

0

FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

6-5

t

P

I

AS

t

AV

V

DS

V

DD

RFD3055LE, RFD3055LESM, RFP3055LE

Test Circuits and Waveforms (Continued)

t

ON

t

DS

GS

10%

d(ON)

90%

50%

t

10%

r

PULSE WIDTH

V

DS

V

R

DUT

L

+

V

DD

-

0

V

0

V

GS

R

GS

V

GS

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 18. SWITCHING TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

V

I

g(REF)

DS

R

L

V

GS

+

V

DD

-

DUT

V

DD

VGS= 2V

0

Q

g(TOT)

V

DS

VGS= 20V

V

Q

OR Q

g(10)

V

GS

VGS= 1V FOR

g(5)

V

= 10V

GS

VGS= 5V FOR

2

L

DEVICES

= 10V FOR

GS

L2 DEVICES

L2 DEVICES

Q

g(TH)

I

g(REF)

0

FIGURE 20. GATE CHARGE TEST CIRCUIT FIGURE 21. GATE CHARGE WAVEFORMS

6-6

RFD3055LE, RFD3055LESM, RFP3055LE

PSPICE Electrical Model

.SUBCKT RFD3055LE 2 1 3 ; rev 1/30/95

CA 12 8 3.9e-9
CB 15 14 4.9e-9
CIN 6 8 3.25e-10

DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 67.8
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1

IT 8 17 1
LDRAIN 2 5 1.0e-9

LGATE 1 9 5.42e-9
LSOURCE 3 7 2.57e-9

GATE

1

MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.7e-2
RGATE 9 20 3.37
RLDRAIN 2 5 10
RLGATE 1 9 54.2
RLSOURCE 3 7 25.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.50e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD

LGATE

RLGATE

RGATE

9

CA

ESG

EVTEMP
+

18
22

20

S1A

12

13

8

S1B

EGS EDS

DPLCAP

10

RSLC2

-

6
8

EVTHRES

+

+

6

-

S2A

14
13

S2B

13

+

+

6
8

-

-

5

RSLC1

51

+

5

ESLC

51

-

50
RDRAIN

16

21

-

19

8

MMED

MSTRO

CIN

15

CB

8

14

+

5
8

-

DBREAK

11

EBREAK

MWEAK

RSOURCE

RBREAK

17 18

IT

8

RVTHRES

+

17
18

-

7

RLSOURCE

RVTEMP
19

-

+

22

S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))}
.MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6)

.MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6)
.MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81)
.MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37)
.MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5)
.MODEL RSLCMOD RES (TC1 = 0 TC2 = 0)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -2.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5)

.ENDS

LDRAIN

RLDRAIN

DBODY

LSOURCE

VBAT

DRAIN

2

SOURCE

3

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

6-7

RFD3055LE, RFD3055LESM, RFP3055LE

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believ ed to be accurate and
reliable. Howe ver, no responsibility is assumed by Intersil or its subsidiaries forits use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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6-8

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