Intersil RFD3055LE, RFD3055LESM Datasheet

RFD3055LE, RFD3055LESM, RFP3055LE

Data Sheet November 1999

11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs

These N-Channel enhancement-mode powerMOSFETsare
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA49158.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3055LE TO-251AA F3055L
RFD3055LESM TO-252AA F3055L
RFP3055LE TO-220AB FP3055LE

NOTE: Whenordering,use theentire part number.Add thesuffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.

File Number 4044.3

Features

• 11A, 60V

DS(ON)

= 0.107Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

SOURCE

DRAIN

GATE

6-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD3055LE, RFD3055LESM, RFP3055LE

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD3055LE, RFD3055LESM,

RFP3055LE UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

±16 V

11

Refer to UIS Curve

38

0.25

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSS

GS(TH)

DSS

ID = 250µA, VGS = 0V 60 - - V
VGS = VDS, ID = 250µA1-3V
VDS = 55V, VGS = 0V - - 1 µA

VDS = 50V, VGS = 0V, TC = 150oC - - 250 µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC
θJA

VGS = ±16V - - ±100 nA

= 8A, VGS = 5V (Figure 11) - - 0.107 Ω

V

≈ 30V, I

DD

VGS = 4.5V, RGS = 32Ω
(Figures 10, 18, 19)

= 8A,

D

- - 170 ns

-8- ns

- 105 - ns

-22- ns

-39- ns

- - 92 ns

VGS = 0V to 10V VDD = 30V, ID = 8A,

I

= 1.0mA

VGS = 0V to 5V - 5.2 6.2 nC

g(REF)

(Figures 20, 21)

- 9.4 11.3 nC

VGS = 0V to 1V - 0.36 0.43 nC
VDS = 25V, VGS = 0V, f = 1MHz

(Figure 14)

- 350 - pF

- 105 - pF

-23- pF

- - 3.94oC/W
TO-220AB - - 62
TO-251AA, TO-252AA - - 100

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-2

ISD = 8A - 1.25 V
ISD = 8A, dISD/dt = 100A/µs - 66 ns

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWER DISSIPATIONvs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

175

15

VGS= 10V

10

VGS= 4.5V

5

, DRAIN CURRENT (A)

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUMCONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

x R

θJC

t

1

+ T

t

2

C

1

10

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

100

10

OPERATION IN THIS
AREA MAY BE

1

LIMITED BY r

, DRAIN CURRENT (A)

D

I

SINGLE PULSE

TJ = MAX RATED

DS(ON)

T

= 25oC

C

0.1
1 10 100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

100µs

1ms

10ms

200

200

100

, PEAK CURRENT (A)

DM

I

10

10

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

TC = 25oC
FOR TEMPERATURES

ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

-2

10

t, PULSE WIDTH (s)

o

25

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-3

C DERATE PEAK

175 - T

C

150

0

10

1

10