Intersil RFD3055, RFD3055SM, RFP3055 Datasheet

RFD3055, RFD3055SM, RFP3055

Data Sheet July 1999 File Number

12A, 60V, 0.150 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA49082.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD3055 TO-251AA FD3055
RFD3055SM TO-252AA FD3055
RFP3055 TO-220AB FP3055

NOTE: When ordering, use the entire part number. Addthesuffix9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.

Features

• 12A, 60V

DS(ON)

= 0.150Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3648.2

Packaging

DRAIN (FLANGE)

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

DRAIN (FLANGE)

4-435

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD3055, RFD3055SM, RFP3055

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD3055, RFD3055SM, RFP3055 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . I

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve A

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.357 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

±20 V

12 A

Refer to UIS Curve

53 W

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)VGS

g(TH)VGS

ISS

OSS

RSS

θJC
θJA

= 250µA, VGS = 0V (Figure 11) 60 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = Rated BV
TC = 125oC, VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS

--25µA

VGS = ±20V - - 100 nA

= 12A, VGS = 10V (Figure 9) (Note 2) - - 0.150 Ω

VDD = 30V, ID = 12A
RL = 2.5Ω, VGS = +10V
RG = 10Ω
(Figure 13)

- - 40 ns

-7-ns

-21- ns

-16- ns

-10- ns

- - 40 ns
= 0 to 20V VDD = 48V,ID = 12A,
= 0 to 10V - 10 12 nC
= 0 to 2V - 0.6 0.8 nC

RL = 4Ω,
I

= 0.24mA

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V,
f = 1MHz (Figure 12)

-1923nC

- 300 - pF

- 100 - pF

-30- pF

- - 2.8

TO-251 and TO-252 - - 100
TO-220 - - 62.5

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD
rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

4-436

ISD = 12A - - 1.5 V
ISD = 12A, dISD/dt = 100A/µs - - 100 ns

RFD3055, RFD3055SM, RFP3055

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

14

12

10

8

6

, DRAIN CURRENT (A)

4

D

I

2

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

0.05

0.02

NORMALIZED TRANSIENT

θJC,

Z

50

10

1

, DRAIN CURRENT (A)

D

I

0.1

0.01

THERMAL IMPEDANCE

0.01

TC = 25oC
TJ = MAX RATED
SINGLE PULSE

1

SINGLE PULSE

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

DS

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

10 100

, DRAIN TO SOURCE VOLTAGE (V)

-3

10

t1, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

DC

-2

10

200

TC = 25oC

100

VGS = 20V

VGS = 10V

TRANSCONDUCTANCE

, PEAK CURRENT CAPABILITY (A)

MAY LIMIT CURRENT

DM

I

IN THIS REGION

10

-3

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-2

-1

10

10

0

10

t, PULSE WIDTH (ms)

0

10

II

25

1

10

θJC

1/t2

*

x R

175 T

--------------------- -=

150

2

10

θJC

–

+ T

C

C

1

10

3

10

4

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-437