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RFD20N03, RFD20N03SM
Data Sheet July 1999 File Number
20A, 30V, 0.025 Ohm, N-Channel Power
MOSFETs
The RFD20N03 and RFD20N03SM N-Channel power
MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers.These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49235.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD20N03 TO-251AA F20N03
RFD20N03SM TO-252AA F20N03
NOTE: When ordering,use theentire partnumber. Addthesuffix 9A to
obtain the TO-252AA variant in tape and reel, e.g., RFD20N03SM9A.
Features
• 20A, 30V
DS(ON)
= 0.025Ω
®
Model
•r
• Temperature Compensating PSPICE
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
4350.1
Packaging
(FLANGE)
DRAIN
S
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
4-427
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
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RFD20N03, RFD20N03SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V
30 V
±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation (Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
DM
AS
D
Derate Above 25oC (Figure 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
20
Figure 5
Figure 6
90
0.60
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V (Figure 11) 30 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 30V, VGS = 0V - - 1 µA
VDS = 30V, VGS = 0V, TC = 150oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
ON
OFF
g(10)
g(TH)VGS
OSS
RSS
VGS = ±20V - - 100 nA
= 20A, VGS = 10V (Figure 9) - 0.022 0.025 Ω
VDD = 15V, ID≅ 20A,
RL =0.75Ω, VGS= 10V,
RGS = 9.1Ω
r
- - 60 ns
-10-ns
-30-ns
-12-ns
f
-32-ns
- - 66 ns
= 0V to 20V VDD = 15V, ID≅ 20A,
VGS = 0V to 10V - 28 40 nC
= 0V to 2V - 2.4 2.9 nC
VDS = 25V, VGS = 0V, f = 1MHz
ISS
RL = 0.75Ω
I
= 1.0mA
g(REF)
(Figure 13)
(Figure 12)
-6075nC
- 1150 - pF
- 550 - pF
- 110 - pF
(Figure 3) - - 1.66oC/W
θJC
TO-251, TO-252 - - 100
θJA
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
4-428
SD
rr
RR
ISD = 20A - - 1.25 V
ISD = 20A, dISD/dt = 100A/µs--70ns
ISD = 20A, dISD/dt = 100A/µs - - 145 nC
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Typical Performance Curves
RFD20N03, RFD20N03SM
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
JC
θ
Z
THERMAL IMPEDANCE
0.01
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
1/t2
x R
JC
JC
θ
θ
0
10
175
2
+ T
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
V
DSS(MAX)
10
TJ = MAX RATED
T
C
= 30V
= 25oC
100µs
1ms
10ms
100ms
DC
100
500
VGS = 20V
100
, PEAK CURRENT (A)
DM
I
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
-4
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-3
10
-2
10
t, PULSE WIDTH (s)
o
25
-1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-429
C DERATE PEAK
175 - T
C
150
0
10
1
10