Intersil RFD20N03, RFD20N03SM Datasheet

RFD20N03, RFD20N03SM

Data Sheet July 1999 File Number

20A, 30V, 0.025 Ohm, N-Channel Power
MOSFETs

The RFD20N03 and RFD20N03SM N-Channel power
MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers.These
transistors can be operated directly from integrated circuits.

Formerly developmental type TA49235.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD20N03 TO-251AA F20N03
RFD20N03SM TO-252AA F20N03

NOTE: When ordering,use theentire partnumber. Addthesuffix 9A to
obtain the TO-252AA variant in tape and reel, e.g., RFD20N03SM9A.

Features

• 20A, 30V

DS(ON)

= 0.025Ω

®

Model

•r

• Temperature Compensating PSPICE

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

4350.1

Packaging

(FLANGE)

DRAIN

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-427

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD20N03, RFD20N03SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation (Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

DM

AS

D

Derate Above 25oC (Figure 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

20

Figure 5
Figure 6

90

0.60

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 11) 30 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 30V, VGS = 0V - - 1 µA
VDS = 30V, VGS = 0V, TC = 150oC--50µA

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

OFF

g(10)

g(TH)VGS

OSS

RSS

VGS = ±20V - - 100 nA

= 20A, VGS = 10V (Figure 9) - 0.022 0.025 Ω

VDD = 15V, ID≅ 20A,
RL =0.75Ω, VGS= 10V,
RGS = 9.1Ω

r

- - 60 ns

-10-ns

-30-ns

-12-ns

f

-32-ns

- - 66 ns

= 0V to 20V VDD = 15V, ID≅ 20A,
VGS = 0V to 10V - 28 40 nC

= 0V to 2V - 2.4 2.9 nC
VDS = 25V, VGS = 0V, f = 1MHz

ISS

RL = 0.75Ω
I

= 1.0mA

g(REF)

(Figure 13)

(Figure 12)

-6075nC

- 1150 - pF

- 550 - pF

- 110 - pF

(Figure 3) - - 1.66oC/W

θJC

TO-251, TO-252 - - 100

θJA

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

4-428

SD

rr

RR

ISD = 20A - - 1.25 V
ISD = 20A, dISD/dt = 100A/µs--70ns
ISD = 20A, dISD/dt = 100A/µs - - 145 nC

Typical Performance Curves

RFD20N03, RFD20N03SM

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

JC

JC

θ

θ

0

10

175

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

V

DSS(MAX)

10

TJ = MAX RATED
T

C

= 30V

= 25oC

100µs

1ms

10ms
100ms
DC

100

500

VGS = 20V

100

, PEAK CURRENT (A)

DM

I

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

-4

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

-2

10

t, PULSE WIDTH (s)

o

25

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-429

C DERATE PEAK

175 - T

C

150

0

10

1

10