Intersil RFD16N06, RFD16N06SM Datasheet

Semiconductor

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j

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September 1998

RFD16N06,

RFD16N06SM

16A, 60V, 0.047 Ohm,

N-Channel Power MOSFET

[ /Title
(RFD16
N06,
RFD16
N06SM)

Sub-

ect
(16A,
60V,

0.047
Ohm,
N-Chan­nel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Chan­nel
Power
MOS­FET,
TO­251AA,
TO­252AA)

Cre-

Features

• 16A, 60V

•r

Temperature Compensating

•

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047Ω

DS(ON)

o

C Operating Temperature

Components to PC Boards”

PSPICE Model

Ordering Information

P AR T NUMBER P ACKAGE BRAND

RFD16N06 TO-251AA F16N06
RFD16N06SM TO-252AA F16N06

NOTE: When ordering, use the entire part number. Add suffix 9A to ob­tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

Description

These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives opti­mum utilization of silicon, resulting in outstanding perfor­mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Formerly developmental type TA09771.

Symbol

DRAIN

GATE

SOURCE

DRAIN
(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 4087.1

RFD16N06, RFD16N06SM

Absolute Maximum Ratings T

= 25oC

C

RFD16N06, RFD16N06SM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

DM

GS

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maxim um Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V
16

±20 V

Refer to UIS Curve

72

0.48

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 60 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS

,

--25µA

TC = 150oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

OFF

g(10)

g(TH)VGS

OSS

RSS

VGS = ±20V - - ±100 nA

= 16A, VGS = 10V (Figure 9) - - 0.047 Ω

VDD = 30V, I
VGS = 10V, RG = 25Ω
(Figures 13, 16, 17)

r

≈ 8A, R

D

= 3.75Ω,

L

- - 65 ns

-14- ns

-30- ns

-55- ns

f

-30- ns

- - 125 ns

= 0V to 20V VDD = 48V, ID = 16A,
VGS = 0V to 10V - - 45 nC

RL = 3Ω, I
(Figures 18, 19)

G(REF)

= 0.8mA

- - 80 nC

= 0V to 2V - - 2.2 nC
VDS = 25V, VGS = 0V, f = 1MHz - 900 - pF

ISS

- 325 - pF

- 100 - pF

θJC

TO-251 and TO-252 - - 100oC/W

θJA

- - 2.083oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

ISD = 16A - - 1.5 V

SD

ISD = 16A, dISD/dt = 100A/µs - - 125 ns

rr

5-2

Typical Performance Curves

RFD16N06, RFD16N06SM

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWER DISSIP A TION vs CASE

TEMPERA TURE

2

1

0.5

0.2

0.1

0.1

, NORMALIZED

Z

JC

θ

THERMAL IMPEDANCE

0.01
10

0.05

0.02

0.01

-5

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

20

16

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

JC

JC

θ

θ

0

10

+ T

175

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

300

200

100

, PEAK CURRENT (A)

DM

TRANSCONDUCTANCE

I

MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

VGS = 20V

-4

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

VGS = 10V

-3

10

t, PULSE WIDTH (s)

I = I

-2

10

o

C DERATE PEAK

175 - T

25

150

-1

10

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

TC = 25oC

TJ = MAX RATED

100µs

1ms

10ms
100ms

DC

10

100

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

5-3

C

TC = 25oC

0

10

1

10