Intersil RFD16N05, RFD16N05SM Datasheet

RFD16N05, RFD16N05SM

Data Sheet July 1999 File Number

16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs

The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses featuresizesapproachingthoseof
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters,motordrivers,andrelay drivers. These
transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05 TO-251AA F16N05
RFD16N05SM TO-252AA F16N05

NOTE: When ordering,usetheentire part number.Add thesuffix 9Ato
obtainthe TO-252AAvariant inthe tapeand reel,i.e., RFD16N05SM9A.

Features

• 16A, 50V

DS(ON)

= 0.047Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

2267.5

Packaging

DRAIN (FLANGE)

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

4-420

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD16N05, RFD16N05SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD16N05, RFD16N05SM, UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

DM

GS

AS

D

Refer to Peak Current Curve

D

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V
16

±20 V

Refer to Figure 5

72

0.48

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 11) 50 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V,

DSS

--25µA

TC = 150oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSSVGS

(ON)VDD

r

f

g(10)VGS

(TH)VGS

ISSVDS

OSS

RSS

θJC
θJA

= ±20V - - ±100 nA

= 16A, VGS = 10V (Figure 9) - - 0.047 Ω

= 25V, ID = 8A, RL = 3.125Ω,
VGS = 10V, RGS = 25Ω
(Figure 13)

- - 65 ns

-14- ns

-30- ns

-55- ns

-30- ns

- - 125 ns
= 0V to 20V VDD = 40V, I
= 0V to 10V - - 45 nC
= 0V to 2V - - 2.2 nC

RL = 2.5Ω
I

g(REF)

(Figure 13)

= 25V, VGS = 0V, f = 1MHz

(Figure 12)

D

= 0.8mA

≈ 16A,

- - 80 nC

- 900 - pF

- 325 - pF

- 100 - pF

- - 2.083oC/W

TO-251 and TO-252 - - 100

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%.

3. Repetitive rating: pulsewidth limited by maximum junction temperature. See TransientThermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

4-421

ISD = 16A - - 1.5 V

SD

ISD = 16A, dISD/dt = 100A/µs - - 125 ns

rr

RFD16N05, RFD16N05SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TENPERATURE

2

1

150

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 2. MAXIMUM CONTINUOUS DRAINCURRENT vs

CASE TEMPERATURE

175

0.5

0.2

0.1

0.1

, NORMALIZED

0.05

JC

θ

Z

0.02

THERMAL IMPEDANCE

0.01

0.01

-5

10

100

10

OPERATION IN THIS
AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

10

V

DSS(MAX)

-3

10

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

T

= MAX RATED

J

TC = 25oC

= 50V

100µs

1ms

10ms
100ms

DC

100

-2

10

200

100

, PEAK CURRENT (A)

DM

I

10

-5

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

VGS = 20V

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

JA

θ

0

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

10

I = I

-2

o

25

10

+ T

JA

θ

C DERATE PEAK

175 - T

C

150

TC = 25oC

-1

10

A

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-422