Intersil RFD16N03L, RFD16N03LSM Datasheet

RFD16N03L, RFD16N03LSM

Data Sheet April 1999

16A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switchingregulators,switchingconverters, motor drivers and
relay drivers. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.

Formerly developmental type TA49030.

Ordering InformationS

PART NUMBER PACKAGE BRAND

RFD16N03L TO-251AA 16N03L
RFD16N03LSM TO-252AA 16N03L

NOTE: When ordering, use the entire part number. Add the suffix 9A,
toobtain the TO-252AAvariantin tape and reel, e.g. RFD16N03LSM9A.

File Number

Features

• 16A, 30V

DS(ON)

= 0.025Ω

•r

• Temperature Compensating PSPICE™ Model

• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

DRAIN

GATE

4013.2

Packaging

DRAIN

(FLANGE)

SOURCE

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

6-156

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD16N03L, RFD16N03LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD16N03L, RFD16N03LSM UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

30 V
30 V

±10 V

16

Figures 6, 16, 17

90

0.606

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

LC-

1. TJ= 25oC to 150oC.

Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)

DSS

ID = 250µA, VGS = 0V (Figure 13) 30 - - V
VGS = VDS, ID = 250µA (Figure 12) 1 - 2 V
VDS = 30V,

VGS = 0V

GSS

DS(ON)ID

ON

d(ON)

r

d(OFF)

f

OFF

g(TOT)

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

VGS = ±10V - - ±100 nA

= 16A, VGS = 5V (Figure 11) - - 0.025 Ω

VDD = 15V, ID≈ 16A,
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω
(Figures 18, 19)

VGS = 0V to 10V VDD = 24V,
VGS = 0V to 5V - 30 36 nC
VGS = 0V to 1V - 1.5 1.8 nC

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 14)

Figure 3 - - 1.65
TO-251 and TO-252 - - 100

TC = 25oC--1µA
TC = 150oC--50µA

- - 120 ns

-15- ns

-95- ns

-25- ns

-27- ns

- - 80 ns

-5060nC
ID = 16A,
RL = 1.5Ω
I

= 0.6mA

G(REF)

(Figures 15, 20, 21

- 1650 - pF

- 575 - pF

- 200 - pF

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

6-157

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs--75ns

RFD16N03L, RFD16N03LSM

Typical Performance Curves

Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

2

1

150

20

15

10

, DRAIN CURRENT (A)

5

D

I

0

25 50 75 100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.05

0.02

0.01
SINGLE PULSE

0.01

-5

10

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

VGS = 10V

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-5

10

10

VGS = 5V

-4

-3

10

t, PULSE WIDTH (s)

V

DSS

MAX = 30V

10

TC = 25oC

T

= MAX RATED

J

100µs

1ms

10ms
100ms

DC

50

P

DM

t

1

t

2

1/t2

x R

JC

JC

θ

θ

0

10

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

175 - T

25

150

TC = 25oC

-2

10

-1

10

+ T

C

1

10

C

0

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-158