Intersil RFD16N02L, RFD16N02LSM Datasheet

May 1997

RFD16N02L,

RFD16N02LSM

16A, 20V, 0.022 Ohm, N-Channel,

Logic Level, Power MOSFET

Features

• 16A, 20V

•r

Temperature Compensating

•

• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

= 0.022Ω

DS(ON)

o

C Operating Temperature

PSPICE Model

Ordering Information

P AR T NUMBER P ACKAGE BRAND

RFD16N02L TO-251AA 16N02L
RFD16N02LSM TO-252AA 16N02L

NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.

Formerly developmental type TA49243.

Description

The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert­ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.

Symbol

D

G

S

Packaging

(FLANGE)

DRAIN

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

File Number 4341

RFD16N02L, RFD16N02LSM

Absolute Maximum Ratings T

= 25oC

C

RFD16N02L, RFD16N02LSM UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

20 V
20 V

±10 V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

STG

L

16

Refer to UIS Curve

90

0.606

-55 to 175
260

A

W

W/oC

o

C

o

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V 20 - - V
VGS = VDS, ID = 250µA1-2V
VDS = 20V,

VGS = 0V

TC = 25oC--1µA
TC = 150oC--50µA

VGS = ±10V - - ±100 nA

= 16A, VGS = 5V - - 0.022 Ω

VDD = 15V, I
RL = 0.93Ω, VGS = 5V,
RGS = 5Ω

≅ 16A,

D

- - 120 ns

-15- ns

-95- ns

-25- ns

-27- ns

- - 80 ns

VGS = 0V to 10V VDD≅ 16V,

I

≈ 16A,

VGS = 0V to 5V - 30 36 nC

D

RL = 1.0Ω

-5060nC

VGS = 0V to 1V - 1.5 1.8 nC
VDS = 20V, VGS = 0V,

f = 1MHz

- 1300 - pF

- 724 - pF

- 250 - pF

- - 1.65

TO-251 and TO-252 - - 100

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD

rr

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs--80ns

2

Typical Performance Curves

RFD16N02L, RFD16N02LSM

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING

2

1

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

.05
.02

.01

SINGLE PULSE

-5

10

-4

10

10

20

15

10

, DRAIN CURRENT (A)

5

D

I

0

150

25 50 75 100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-3

t, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

125

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x R

-1

10

2

1/t2

JC

θ

0

10

x Z

150

JC

θ

+ T

175

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

V

DSS

T

MAX = 20V

10

TC = 25oC

= MAX RATED

J

100µs

1ms

10ms

100ms

DC

50

500

VGS = 10V

100

TRANSCONDUCTANCE

, PEAK CURRENT (A)

MAY LIMIT CURRENT
IN THIS REGION

DM

I

10

-5

10

-4

10

VGS = 5V

-3

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

10

175 - T

25

150

-2

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

C

TC = 25oC

10

0

1

10