Intersil RFD15P06, RFP15P06 Datasheet

RFD15P06, RFD15P06SM, RFP15P06

Data Sheet July 1999

15A, 60V, 0.150 Ohm, P-Channel Power
MOSFETs

These P-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. Thesetransistorscan be operated
directly from integrated circuits.

Formerly developmental type TA09833.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD15P06 TO-251AA F15P06
RFD15P06SM TO-252AA F15P06
RFP15P06 TO-220AB RFP15P06

NOTE: Whenordering, use theentire part number. Add the suffix 9A to
obtain the TO-252AAvariantinthetapeandreel,i.e.,RFD15P06SM9A.

File Number

Features

• 15A, 60V

DS(ON)

= 0.150Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3988.3

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

4-103

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD15P06, RFD15P06SM, RFP15P06

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

C

RFD15P06, RFD15P06SM, RFP15P06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Figure 5) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

DM

GS
AS

D

Refer to Peak Current Curve

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-60 V

-60 V
15

±20 V

Refer to UIS Curve

80

0.533

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -60 - - V

= VDS, ID = 250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±100 nA

≈ 15A, V

VDD = -30V, ID = 7.5A
RL = 4.0Ω, VGS = -10V
RG = 12.5Ω
(Figure 13)

= -10V, (Figure 9) - - 0.150 W

GS

- - 60 ns

-16- ns

-30- ns

-50- ns

-20- ns

- - 100 ns
= 0V to -20V VDD = -48V, ID = 15A,
= 0V to -10V - - 75 nC

VGS = 0V to -2V - - 3.5 nC

RL = 3.20Ω
I

= 0.65mA

G(REF)

VDS = -25V, VGS = 0V
f = 1MHz
(Figure 12)

- - 150 nC

- 1150 - pF

- 300 - pF

-56- pF

TO-220AB, TO-251AA, TO-252AA - - 1.875oC/W
TO-251AA, TO-252AA - - 100
TO-220AB - - 62

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Notte 2) V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulsed: pulse duration ≤ 300ms Max, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-104

ISD = -15A - - -1.5 V
ISD = -15A, dISD/dt = 100A/µs - - 125 ns

RFD15P06, RFD15P06SM, RFP15P06

Typical Performance Curves

Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

0.5

150

-16

-12

-8

, DRAIN CURRENT (A)

-4

D

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

THERMAL IMPEDANCE

0.1

0.05

0.02

0.01

NORMALIZED

θJC,

Z

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100

-10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1

-1 -10 -100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

= MAX RATED

T

J

TC = 25oC

-2

10

t, RECTANGULAR PULSE DURATION (s)

-200
VGS = -20V

-100

100µs

1ms

, PEAK CURRENT (A)

10ms

100ms

DC

VGS = -10V

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-10

-5

10

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

0

10

FOR TEMPERATURES ABOVE 25

1/t2

θ JC

x R

2

θ JC

+ T

C

1

10

o

C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

175 TC–



II

=

----------------------- -



25

150



TC = 25oC

-4

10

-3

10

-2

10

-1

10

0

10

1

10

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-105