Intersil RFD15P05SM, RFP15P05 Datasheet

RFD15P05, RFD15P05SM, RFP15P05

Data Sheet July 1999

15A, 50V, 0.150 Ohm, P-Channel Power
MOSFETs

These are P-Channel power MOSFETs manufacturedusing
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. Thesetransistorscan be operated
directly from integrated circuits.

Formerly developmental type TA09833.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD15P05 TO-251AA D15P05
RFD15P05SM TO-252AA D15P05
RFP15P05 TO-220AB RFP15P05

NOTE: When ordering, use the entire part number.Add the suffix 9Ato
obtain the TO-252AAvariantinthetapeandreel,i.e.,RFD15P05SM9A.

File Number

Features

• 15A, 50V

DS(ON)

= 0.150Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2387.5

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

JEDEC TO-252AA

GATE
SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-96

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD15P05, RFD15P05SM, RFP15P05

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD15P05, RFD15P05SM,

RFP15P05 UNITS

Drain Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage (RG = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

DM

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

GS

D

Refer to Peak Current Curve

AS

D

-50 V

-50 V

±20 V

-15

Refer to UIS Curve

80 W

A

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.533 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at -10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

R

F

OFF

G(TOT)VGS

G(-10)
G(TH)

ISS
OSS
RSS

θJC
θJA

= 250µA, VGS = 0V (Figure 11) -50 - - V

= VDS, ID = 250µA -2.0 - -4.0 V

VDS = Rated BV

DSS

VDS = 0.8 x Rated BV

= 150oC--25µA

DSS,TC

---1µA

VGS = ±20V - - ±100 nA

= 15A, VGS = -10V (Figure 9) - - 0.150 Ω

VDD = -25V, I
RL = 3.3Ω, VGS = -10V
(Figures 16, 17)

≈ 7.5A, R

D

= 12.5Ω,

G

- - 60 ns

-16 - ns

-30 - ns

-50 - ns

-20 - ns

- - 100 ns

= 0V to -20V VDD = -40V, ID = 15A,
VGS = 0V to -10V - - 75 nC
VGS = 0V to -2V - - 3.5 nC

RL = 2.67Ω,
I

= -0.65mA

G(REF)

(Figures 18, 19)

VDS = -25V, VGS = 0V
f = 1MHz (Figure 12)

- - 150 nC

- 1150 - pF

- 300 - pF

-56 - pF
TO-220AB, TO-251AA, TO-252AA - - 1.875
TO-251AA, TO-252AA - - 100
TO-220AB - - 62.5

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

RR

NOTES:

2. Pulse test: pulse duration ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-97

ISD = -15A - - -1.5 V

SD

ISD = -15A, dISD/dt = -100A/µs - - 125 ns

Typical Performance Curves

RFD15P05, RFD15P05SM, RFP15P05

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

0.5

0.2

0.1

0.1

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

NORMALIZED TRANSIENT

θJC,

Z

175

-16

-12

-8

, DRAIN CURRENT (A)

-4

D

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θJC

0

10

t

2

θJC

+ T

175

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100

-10

, DRAIN CURRENT (A)

D

I

-1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1 -10 -100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

TC = 25oC

= MAX RATED

T

J

100µs

1ms

10ms
100ms

DC

-200
VGS = -20V

-100

VGS = -10V

TRANSCONDUCTANCE

, PEAK CURRENT CAPABILITY (A)

MAY LIMIT CURRENT

DM

I

IN THIS REGION

-10

-5

10

TC = 25oC
FOR TEMPERATURES ABOVE 25oC

DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

175 T



II

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

--------------------- -

=



25



-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-98

150

–

C

0

10

1

10