Intersil RFD15N06LE, RFD15N06LESM Datasheet

RFD15N06LE, RFD15N06LESM

Data Sheet April 1999

15A, 60V, 0.065 Ohm, ESD Rated, Logic
Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Formerly developmental type TA49165.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD15N06LE TO-251AA F15N6L
RFD15N06LESM TO-252AA F15N6L

NOTE: When ordering,usethe entire part number.For ordering intape
and reel,add the suffix 9A to the partnumber, i.e. RFD15N06LESM9A.

File Number

Features

• 15A, 60V

DS(ON)

= 0.065Ω

•r

• 2kV ESD Protected

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

4079.1

Packaging

DRAIN (FLANGE)

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

6-149

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD15N06LE, RFD15N06LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD15N06LE, RFD15N06LESM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

GS

DM

AS

D

Refer to Peak Current Curve

D

60 V
60 V

±10 V

15

Refer to UIS Curve

72

0.48

-55 to 175

A

W

W/oC

o

C

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . ESD 2 kV

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V, Figure 13 60 - - V
VGS= VDS, ID = 250µA, Figure 12 1 - 2 V
VDS = 48V,

VGS = 0V

TC = 25oC--1µA
TC = 150oC--50µA

VGS = ±10V - - 10 µA

= 15A, VGS = 5V - - 0.065 Ω

VDD = 30V, ID = 15A, RL = 2.0Ω,
VGS = 5V, RGS = 2.5Ω
Figures 10, 18, 19

- - 77 ns

-11- ns

-40- ns

-30- ns

-18- ns

- - 75 ns
VGS = 0V to 10V VDD = 48V,
VGS = 0V to 5V - 21 26 nC
VGS = 0V to 1V - 0.95 1.20 nC

ID = 15A,
RL = 3.20Ω
Figures 20, 21

VDS = 25V, VGS = 0V,
f = 1MHz
Figure 14

-3949nC

- 855 - pF

- 240 - pF

-75- pF

- - 2.08
TO-251 and TO-252 - - 100

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-150

ISD = 15A - - 1.5 V
ISD = 15A, dISD/dt = 100A/µs--80ns

RFD15N06LE, RFD15N06LESM

Typical Performance Curves

Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

1

0.5

150

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

, NORMALIZED
Z

θJC

THERMAL IMPEDANCE

0.05

0.02

0.01
SINGLE PULSE

0.01

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

TC = 25oC, TJ = MAX RATED

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

110

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

200

100

100µs

1ms

10ms

100ms

DC

10060

, PEAK CURRENT CAPABILITY (A)

DM

I

10

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

TC = 25oC

VGS = 10V

VGS = 5V

THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

10

P

DM

1/t2

θJC
0

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

-3

-2

10

t, PULSE WIDTH (s)

t

1

t

2

x R

+ T

θJC

C

o

C DERATE PEAK

175 - T

C

150

-1

10

10

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-151