Intersil RFD14N06L, RFD14N06LSM, RFP14N06L Datasheet
RFD14N06L, RFD14N06LSM, RFP14N06L
Data Sheet July 1999
14A, 60V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relaydrivers. This performance is accomplished
through a special gateoxide design which providesfullrated
conductance at gate bias in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD14N06L TO-251AA 14N06L
RFD14N06LSM TO-252AA 14N06L
RFP14N06L TO-220AB FP14N06L
NOTE: When ordering, use the entire part number. Addthe suffix 9A, to
obtain the TO-252AA variant in tape and reel, i.e. RFD14N06LSM9A.
File Number
4088.3
Features
• 14A, 60V
DS(ON)
= 0.100Ω
®
Model
•r
• Temperature Compensating PSPICE
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN (FLANGE)
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
6-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFD14N06L, RFD14N06LSM, RFP14N06LS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFD14N06L, RFD14N06LSM,
RFP14N06LS UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
GS
DM
AS
D
Refer to Peak Current Curve
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
±10 V
14
Refer to UIS Curve
48
0.32
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(5)
g(TH)
ISS
OSS
RSS
θJC
θJA
ID = 250µA, VGS = 0V, Figure 13 60 - - V
VGS = VDS, ID = 250µA, Figure 12 1 - 2 V
VDS = 48V,
VGS = 0V
TC = 25oC--1µA
TC = 150oC--50µA
VGS = ±10V - - 100 nA
= 14A, VGS = 5V - - 0.100 Ω
VDD = 30V, ID = 7A,
RL = 4.28Ω, VGS = 5V,
RGS = 0.6Ω
Figures 10, 18, 19
- - 60 ns
-13- ns
-24- ns
-42- ns
-16- ns
- - 100 ns
VGS = 0V to 10V VDD = 48V,
VGS = 0V to 5V - - 25 nC
VGS = 0V to 1V - - 1.5 nC
ID = 14A,
RL = 3.43Ω
Figures 20, 21
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 14
- - 40 nC
- 670 - pF
- 185 - pF
-50- pF
- - 3.125
TO-251 and TO-252 - - 100
TO-220 - - 80
o
o
o
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
6-2
SD
rr
ISD = 14A - - 1.5 V
ISD = 14A, dISD/dt = 100A/µs - - 125 ns
RFD14N06L, RFD14N06LSM, RFP14N06L
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
25 50 75 100
0
0
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
150
175
16
12
8
, DRAIN CURRENT (A)
4
D
I
0
25 50 75 100
TC, CASE TEMPERATURE (oC)
125
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
175
0.5
0.2
0.1
0.1
NORMALIZED
JC,
θ
Z
100
10
, DRAIN CURRENT (A)
D
I
1
1
0.05
0.02
THERMAL IMPEDANCE
0.01
0.01
-5
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
VDS, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
DS(ON)
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
-1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = 25oC
= MAX RATED
T
J
100µs
1ms
10ms
100ms
DC
100
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
DM
10
-5
10
VGS = 10V
, PEAK CURRENT CAPABILITY (A)
I
VGS = 5V
-4
10
-3
10
t, PULSE WIDTH (s)
P
DM
t
1
t
2
1/t2
JA
θ
0
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-2
10
o
C DERATE PEAK
=
II
25
-1
10
+ T
A
175 T
–
---------------------
150
TC = 25oC
0
10
1
10
C
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
6-3
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