Intersil RFD14N05L, RFD14N05LSM, RFP14N05L Datasheet

RFD14N05L, RFD14N05LSM, RFP14N05L

Data Sheet April 1999

14A, 50V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance isaccomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.

Formerly developmental type TA09870.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD14N05L TO-251AA 14N05L
RFD14N05LSM TO-252AA 14N05L
RFP14N05L TO-220AB FP14N05L

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AAvariant in the tape and reel, i.e., RFD14N05LSM9A.

File Number

Features

• 14A, 50V

DS(ON)

= 0.100Ω

•r

• Temperature Compensating PSPICE™ Model

• Can be Driven Directly from CMOS, NMOS, and
TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

2246.3

Packaging

DRAIN (FLANGE)

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

DRAIN (FLANGE)

6-135

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD14N05L, RFD14N05LSM, RFP14N05L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD14N05L, RFD14N05LSM,

RFP14N05L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V

±10 V

14

Refer to UIS Curve

48

0.32

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V, Figure 13 50 - - V

= VDS, ID = 250µA, Figure12 1 - 2 V
VDS = 40V, VGS = 0V - - 1 µA
VDS = 40V, VGS = 0V, TC = 150oC--50µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

R

GSS

(ON)

g(TH)VGS

OSS
RSS

VGS = ±10V - - ±100 nA

= 14A, VGS = 5V, Figures 9, 11 - - 0.100 Ω

VDD = 25V, ID = 7A,
RL = 3.57Ω, VGS = 5V,
RGS = 0.6Ω

r

- - 60 ns

-13 - ns

-24 - ns

-42 - ns

f

-16 - ns

- - 100 ns

= 0V to 10V VDD= 40V,ID=14A,
VGS = 0V to 5V - - 25 nC

g(5)

RL = 2.86Ω
Figures 20, 21

- - 40 nC

= 0V to 1V - - 1.5 nC
VDS = 25V, VGS = 0V, f = 1MHz

ISS

Figure 14

- 670 - pF

- 185 - pF

-50 - pF

θJC

TO-251 and TO-252 - - 100

θJA

TO-220 - - 80

θJA

- - 3.125oC/W

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-136

ISD = 14A - - 1.5 V

SD

ISD = 14A, dISD/dt = 100A/µs - - 125 ns

rr

RFD14N05L, RFD14N05LSM, RFP14N05L

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

1

150

175

16

12

8

, DRAIN CURRENT (A)

4

D

I

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

175

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

100

10

, DRAIN CURRENT (A)

D

I

1

0.5
1

0.05

0.02

THERMAL IMPEDANCE

0.01
SINGLE PULSE

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC = 25oC

TJ = MAX. RATED

100µs

1ms

10ms
100ms

DC

10

100

200

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100

, PEAK CURRENT CAPABILITY (A)

DM

I

TC = 25oC

10

-5

10

VGS = 5V
VGS = 10V

-4

10

-3

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

2

x R

JC

θ

0

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

-2

10

+ T

JC

C

θ

o

C DERATE PEAK

175 - T

C

150

-1

10

10

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-137